A high-performance SI memory cell

D.M.W. Leenaerts, A.J. Leeuwenburgh, G.G. Persoon

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

8 Citaten (Scopus)
69 Downloads (Pure)

Samenvatting

In this paper, we present a new type of switched current memory cell with a three phase clock cycle. The design technique is based on differential error matching, which leads to input currents between 50 and 85 PA. The conversion period is 700 ns, which is significantly lower, compared to other results presented in the literature, taking into account the error. Still higher speeds can be obtained by using shorter channel-length technologies. a high accuracy cell with measured errors less than 200 ppm for
Originele taal-2Engels
Pagina's (van-tot)1404-1407
Aantal pagina's4
TijdschriftIEEE Journal of Solid-State Circuits
Volume29
Nummer van het tijdschrift11
DOI's
StatusGepubliceerd - 1994

Vingerafdruk Duik in de onderzoeksthema's van 'A high-performance SI memory cell'. Samen vormen ze een unieke vingerafdruk.

  • Citeer dit