A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

J. Everts, J. Das, J. Van den Keybus, J. Genoe, M. Germain, Johan Driesen

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

35 Citaten (Scopus)
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Samenvatting

A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si. The very low dynamic onresistance (Rdyn ˜ 0.23 O) and very low gate-charges (e.g. Qgate ~15 nC at Vos = 200 V) result in minor transistor losses. Together with a proper design of the passive components and the use of SiC diodes, very high overall efficiencies are reached. Measurements show high conversion efficiencies of 96.1% (Pout = 106 W, 76 to 142 V at 512.5 kHz) and 93.9% (Pout = 97.5 W, 78 to 142 V at 845.2 kHz). These are, to our knowledge, the highest efficiencies reported for an enhancement mode GaN DHFET on Si in this frequency range. The transistor switching losses are concentrated in the turn-on interval, and dominate at high frequencies. This is due to a limited positive gate-voltage swing, as the gate-source diode restricts the positive drive voltage.
Originele taal-2Engels
TitelProceedings of the IEEE Energy Conversion Congress and Exposition (ECCE 2010), 12-16 September 2010, Atlanta, Georgia
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's3296-3302
ISBN van geprinte versie978-1-4244-5286-6
DOI's
StatusGepubliceerd - 2010
Evenement2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010) - "Hilton Atlanta Hotel", Atlanta, Verenigde Staten van Amerika
Duur: 12 sep 201016 sep 2010
Congresnummer: 2
http://www.ieee-pels.org/conference/ecce/wp-content/uploads/2015/11/2010-ECCE-Program_FINAL.pdf

Congres

Congres2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010)
Verkorte titelECCE 2010
LandVerenigde Staten van Amerika
StadAtlanta
Periode12/09/1016/09/10
AnderEnergy Conversion Congress and Exposition
Internet adres

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  • Citeer dit

    Everts, J., Das, J., Van den Keybus, J., Genoe, J., Germain, M., & Driesen, J. (2010). A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon. In Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE 2010), 12-16 September 2010, Atlanta, Georgia (blz. 3296-3302). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ECCE.2010.5618323