A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS

P.T.M. van Zeijl; M. Collados

doi:10.1109/VDAT.2007.373242

A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS

P.T.M. van Zeijl
, M. Collados

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

6 Citaten (Scopus)

Samenvatting

A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90nm digital CMOS process for the 802.11a/b/g standards, The digital modulator reaches an output power of -5dBm for 54Mbit/s using 64QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7mW from a 1.2V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.

Originele taal-2	Engels
Titel	2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 - Proceedings of Technical Papers
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	4
ISBN van geprinte versie	1-4244-0582-3
DOI's	https://doi.org/10.1109/VDAT.2007.373242
Status	Gepubliceerd - 2007
Extern gepubliceerd	Ja
Evenement	2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 - Hsinchu, Taiwan Duur: 25 apr. 2007 → 27 apr. 2007

Congres

Congres	2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007
Land/Regio	Taiwan
Stad	Hsinchu
Periode	25/04/07 → 27/04/07

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@inproceedings{1e9331ba8aa64e6f91571e6d31d2c728,

title = "A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS",

abstract = "A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90nm digital CMOS process for the 802.11a/b/g standards, The digital modulator reaches an output power of -5dBm for 54Mbit/s using 64QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7mW from a 1.2V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.",

author = "\{van Zeijl\}, P.T.M. and M. Collados",

year = "2007",

doi = "10.1109/VDAT.2007.373242",

language = "English",

isbn = "1-4244-0582-3",

booktitle = "2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 - Proceedings of Technical Papers",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 ; Conference date: 25-04-2007 Through 27-04-2007",

}

van Zeijl, PTM & Collados, M 2007, A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS. in 2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 - Proceedings of Technical Papers., 4239434, Institute of Electrical and Electronics Engineers, 2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007, Hsinchu, Taiwan, 25/04/07. https://doi.org/10.1109/VDAT.2007.373242

A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS. / van Zeijl, P.T.M.; Collados, M.
2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers, 2007. 4239434.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Collados, M.

PY - 2007

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N2 - A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90nm digital CMOS process for the 802.11a/b/g standards, The digital modulator reaches an output power of -5dBm for 54Mbit/s using 64QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7mW from a 1.2V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.

AB - A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90nm digital CMOS process for the 802.11a/b/g standards, The digital modulator reaches an output power of -5dBm for 54Mbit/s using 64QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7mW from a 1.2V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.

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DO - 10.1109/VDAT.2007.373242

M3 - Conference contribution

AN - SCOPUS:34648822593

SN - 1-4244-0582-3

BT - 2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007 - Proceedings of Technical Papers

PB - Institute of Electrical and Electronics Engineers

T2 - 2007 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2007

Y2 - 25 April 2007 through 27 April 2007

ER -

A digital envelope modulator for an OFDM WLAN polar transmitter in 90 nm CMOS

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