A design approach for SiGe low-noise amplifiers using wideband input matching

Z. Chen; H. Gao; P.G.M. Baltus

doi:10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching

Z. Chen
, H. Gao
, P.G.M. Baltus

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

2 Citaten (Scopus)

1 Downloads (Pure)

Samenvatting

This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

Originele taal-2	Engels
Titel	2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Redacteuren	Jari Nurmi, Peeter Ellervee, Juri Mihhailov, Kalle Tammemae, Maksim Jenihhin
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	4
ISBN van elektronische versie	978-1-5386-7656-1
DOI's	https://doi.org/10.1109/NORCHIP.2018.8573488
Status	Gepubliceerd - 11 dec. 2018

Toegang tot document

10.1109/NORCHIP.2018.8573488

Andere bestanden en links

Link to publication in Scopus

Citeer dit

Chen, Z., Gao, H., & Baltus, P. G. M. (2018). A design approach for SiGe low-noise amplifiers using wideband input matching. In J. Nurmi, P. Ellervee, J. Mihhailov, K. Tammemae, & M. Jenihhin (editors), 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) Artikel 8573488 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NORCHIP.2018.8573488

Chen, Z. ; Gao, H. ; Baltus, P.G.M. / A design approach for SiGe low-noise amplifiers using wideband input matching. 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). redacteur / Jari Nurmi ; Peeter Ellervee ; Juri Mihhailov ; Kalle Tammemae ; Maksim Jenihhin. Piscataway : Institute of Electrical and Electronics Engineers, 2018.

@inproceedings{92fc0b95484443b49286b2d6bb209618,

title = "A design approach for SiGe low-noise amplifiers using wideband input matching",

abstract = "This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.",

keywords = "bipolar integrated circuits, CMOS analogue integrated circuits, Ge-Si alloys, integrated circuit design, ladder networks, LC circuits, low noise amplifiers, microwave amplifiers, microwave integrated circuits, millimetre wave amplifiers, millimetre wave integrated circuits, semiconductor materials, wideband amplifiers, bipolar silicon-germanium IC technology, LC-ladder structure, input matching network, cascode structure amplifier, dual-LC tank, resonant tanks, wideband input power matching, noise matching, design procedure, design techniques, wideband low noise amplifier, inductive degeneration, frequency 20.0 GHz to 40.0 GHz, SiGe, Wideband, Impedance matching, Gain, Inductors, Resonant frequency, Transistors, low noise amplifier (LNA), wideband Matching, LC ladder, silicon-germanium (SiGe), Silicon-germanium (SiGe), Wideband Matching",

author = "Z. Chen and H. Gao and P.G.M. Baltus",

year = "2018",

month = dec,

day = "11",

doi = "10.1109/NORCHIP.2018.8573488",

language = "English",

editor = "Jari Nurmi and Peeter Ellervee and Juri Mihhailov and Kalle Tammemae and Maksim Jenihhin",

booktitle = "2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Chen, Z, Gao, H & Baltus, PGM 2018, A design approach for SiGe low-noise amplifiers using wideband input matching. in J Nurmi, P Ellervee, J Mihhailov, K Tammemae & M Jenihhin (reds.), 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)., 8573488, Institute of Electrical and Electronics Engineers, Piscataway. https://doi.org/10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching. / Chen, Z.; Gao, H.; Baltus, P.G.M.
2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). reds. / Jari Nurmi; Peeter Ellervee; Juri Mihhailov; Kalle Tammemae; Maksim Jenihhin. Piscataway: Institute of Electrical and Electronics Engineers, 2018. 8573488.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - A design approach for SiGe low-noise amplifiers using wideband input matching

AU - Chen, Z.

AU - Gao, H.

AU - Baltus, P.G.M.

PY - 2018/12/11

Y1 - 2018/12/11

N2 - This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

AB - This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

KW - bipolar integrated circuits

KW - CMOS analogue integrated circuits

KW - Ge-Si alloys

KW - integrated circuit design

KW - ladder networks

KW - LC circuits

KW - low noise amplifiers

KW - microwave amplifiers

KW - microwave integrated circuits

KW - millimetre wave amplifiers

KW - millimetre wave integrated circuits

KW - semiconductor materials

KW - wideband amplifiers

KW - bipolar silicon-germanium IC technology

KW - LC-ladder structure

KW - input matching network

KW - cascode structure amplifier

KW - dual-LC tank

KW - resonant tanks

KW - wideband input power matching

KW - noise matching

KW - design procedure

KW - design techniques

KW - wideband low noise amplifier

KW - inductive degeneration

KW - frequency 20.0 GHz to 40.0 GHz

KW - SiGe

KW - Wideband

KW - Impedance matching

KW - Gain

KW - Inductors

KW - Resonant frequency

KW - Transistors

KW - low noise amplifier (LNA)

KW - wideband Matching

KW - LC ladder

KW - silicon-germanium (SiGe)

KW - Silicon-germanium (SiGe)

KW - Wideband Matching

UR - https://www.scopus.com/pages/publications/85060575488

U2 - 10.1109/NORCHIP.2018.8573488

DO - 10.1109/NORCHIP.2018.8573488

M3 - Conference contribution

BT - 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

A2 - Nurmi, Jari

A2 - Ellervee, Peeter

A2 - Mihhailov, Juri

A2 - Tammemae, Kalle

A2 - Jenihhin, Maksim

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Chen Z, Gao H, Baltus PGM. A design approach for SiGe low-noise amplifiers using wideband input matching. In Nurmi J, Ellervee P, Mihhailov J, Tammemae K, Jenihhin M, redacteurs, 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). Piscataway: Institute of Electrical and Electronics Engineers. 2018. 8573488 doi: 10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching

Samenvatting

Toegang tot document

Andere bestanden en links

Vingerafdruk

Citeer dit