A design approach for SiGe low-noise amplifiers using wideband input matching

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This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.
Originele taal-2Engels
Titel2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
RedacteurenJari Nurmi, Peeter Ellervee, Juri Mihhailov, Kalle Tammemae, Maksim Jenihhin
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's4
ISBN van elektronische versie978-1-5386-7656-1
DOI's
StatusGepubliceerd - 11 dec 2018

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