A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging

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Samenvatting

This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.

Originele taal-2Engels
Titel2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's4
ISBN van elektronische versie9781728105864
DOI's
StatusGepubliceerd - nov. 2019
Evenement2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, Verenigde Staten van Amerika
Duur: 3 nov. 20196 nov. 2019

Congres

Congres2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Land/RegioVerenigde Staten van Amerika
StadNashville
Periode3/11/196/11/19

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