Samenvatting
This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.
Originele taal-2 | Engels |
---|---|
Titel | 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 |
Plaats van productie | Piscataway |
Uitgeverij | Institute of Electrical and Electronics Engineers |
Aantal pagina's | 4 |
ISBN van elektronische versie | 9781728105864 |
DOI's | |
Status | Gepubliceerd - nov. 2019 |
Evenement | 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, Verenigde Staten van Amerika Duur: 3 nov. 2019 → 6 nov. 2019 |
Congres
Congres | 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 |
---|---|
Land/Regio | Verenigde Staten van Amerika |
Stad | Nashville |
Periode | 3/11/19 → 6/11/19 |