A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography

P.F. Moonen, B. Vratzov, W.T.T. Smaal, G.H. Gelinck, M. Péter, E.R. Meinders, J. Huskens

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10 Citaties (Scopus)

Uittreksel

In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The bottom contact, bottom gate TFTs were fabricated with the foil reversibly glued to a carrier, enhancing the dimensional stability and flatness of the foil to result in a thinner and more homogeneously distributed residual layer thickness. The obtained performance of the TFT devices, showing a mobility of μ = 0.56 cm2 V-1 s-1 with an on/off ratio of >107 and near-zero threshold voltage, was found to be in good agreement with similar, photolithographically patterned state-of-the-art devices recently reported in literature. The results presented here show the feasibility of SFIL as a roll-to-roll compatible and down scalable patterning technique on flexible PEN foil for the fabrication of bottom-gate, bottom-contact flexible high-quality TFTs.

Originele taal-2Engels
Pagina's (van-tot)2207-2214
Aantal pagina's8
TijdschriftOrganic Electronics
Volume12
Nummer van het tijdschrift12
DOI's
StatusGepubliceerd - 1 dec 2011

Vingerafdruk

Thin film transistors
Lithography
Metal foil
flash
foils
Ethylene
ethylene
transistors
lithography
thin films
Fabrication
dimensional stability
fabrication
Dimensional stability
Polystyrenes
flatness
Threshold voltage
printing
threshold voltage
Printing

Citeer dit

Moonen, P.F. ; Vratzov, B. ; Smaal, W.T.T. ; Gelinck, G.H. ; Péter, M. ; Meinders, E.R. ; Huskens, J. / A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography. In: Organic Electronics. 2011 ; Vol. 12, Nr. 12. blz. 2207-2214.
@article{b8a29642ab3b4715a58ea996ec9fa5e6,
title = "A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography",
abstract = "In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The bottom contact, bottom gate TFTs were fabricated with the foil reversibly glued to a carrier, enhancing the dimensional stability and flatness of the foil to result in a thinner and more homogeneously distributed residual layer thickness. The obtained performance of the TFT devices, showing a mobility of μ = 0.56 cm2 V-1 s-1 with an on/off ratio of >107 and near-zero threshold voltage, was found to be in good agreement with similar, photolithographically patterned state-of-the-art devices recently reported in literature. The results presented here show the feasibility of SFIL as a roll-to-roll compatible and down scalable patterning technique on flexible PEN foil for the fabrication of bottom-gate, bottom-contact flexible high-quality TFTs.",
keywords = "Flexible thin film transistor, Foil-on-carrier, Step-and-flash imprint lithography",
author = "P.F. Moonen and B. Vratzov and W.T.T. Smaal and G.H. Gelinck and M. P{\'e}ter and E.R. Meinders and J. Huskens",
year = "2011",
month = "12",
day = "1",
doi = "10.1016/j.orgel.2011.09.020",
language = "English",
volume = "12",
pages = "2207--2214",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "12",

}

A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography. / Moonen, P.F.; Vratzov, B.; Smaal, W.T.T.; Gelinck, G.H.; Péter, M.; Meinders, E.R.; Huskens, J.

In: Organic Electronics, Vol. 12, Nr. 12, 01.12.2011, blz. 2207-2214.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography

AU - Moonen, P.F.

AU - Vratzov, B.

AU - Smaal, W.T.T.

AU - Gelinck, G.H.

AU - Péter, M.

AU - Meinders, E.R.

AU - Huskens, J.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The bottom contact, bottom gate TFTs were fabricated with the foil reversibly glued to a carrier, enhancing the dimensional stability and flatness of the foil to result in a thinner and more homogeneously distributed residual layer thickness. The obtained performance of the TFT devices, showing a mobility of μ = 0.56 cm2 V-1 s-1 with an on/off ratio of >107 and near-zero threshold voltage, was found to be in good agreement with similar, photolithographically patterned state-of-the-art devices recently reported in literature. The results presented here show the feasibility of SFIL as a roll-to-roll compatible and down scalable patterning technique on flexible PEN foil for the fabrication of bottom-gate, bottom-contact flexible high-quality TFTs.

AB - In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The bottom contact, bottom gate TFTs were fabricated with the foil reversibly glued to a carrier, enhancing the dimensional stability and flatness of the foil to result in a thinner and more homogeneously distributed residual layer thickness. The obtained performance of the TFT devices, showing a mobility of μ = 0.56 cm2 V-1 s-1 with an on/off ratio of >107 and near-zero threshold voltage, was found to be in good agreement with similar, photolithographically patterned state-of-the-art devices recently reported in literature. The results presented here show the feasibility of SFIL as a roll-to-roll compatible and down scalable patterning technique on flexible PEN foil for the fabrication of bottom-gate, bottom-contact flexible high-quality TFTs.

KW - Flexible thin film transistor

KW - Foil-on-carrier

KW - Step-and-flash imprint lithography

UR - http://www.scopus.com/inward/record.url?scp=80054107360&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2011.09.020

DO - 10.1016/j.orgel.2011.09.020

M3 - Article

AN - SCOPUS:80054107360

VL - 12

SP - 2207

EP - 2214

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 12

ER -