A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology

X. Li, P.G.M. Baltus, Paul van Zeijl, D. Milosevic, A.H.M. Roermund, van

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

5 Citaten (Scopus)
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Samenvatting

A 73 to 83 GHz injection-locked oscillator (IJLO) is realized in TSMC 65-nm CMOS technology. By using the frequency-sweeping method, a 10 GHz total locking range is achieved with -35 dBm injection power. The power consumption is 9 mW from a 1-V supply. Additional 4 mW and 6 mW are consumed for the input and output buffers respectively for the measurement purpose. The measured sensitivity of the IJLO is -60 dBm. The output power measured at the 50-Ohm load is higher than -10 dBm, and the simulated total settling time of the IJLO is less than 10 µs. The effective core area of the chip is 0.055 mm2.
Originele taal-2Engels
TitelIEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's5-8
ISBN van geprinte versie978-1-4244-8060-9
DOI's
StatusGepubliceerd - 2011
Evenement11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011) - "Glendale Hotel & Spa", Phoenix, Verenigde Staten van Amerika
Duur: 17 jan 201119 jan 2011
Congresnummer: 11

Congres

Congres11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011)
Verkorte titelSiRF 2011
LandVerenigde Staten van Amerika
StadPhoenix
Periode17/01/1119/01/11
AnderIEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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