A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

D. Raiteri, F. Torricelli, K. Myny, M. Nag, B. Van der Putten, E.C.P. Smits, S Steudel, K. Tempelaars, A.K. Tripathi, G.H. Gelinck, A.H.M. Roermund, van, E. Cantatore

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ~100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (
Originele taal-2Engels
TitelProceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's314-316
DOI's
StatusGepubliceerd - 2012
Evenement59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, Verenigde Staten van Amerika
Duur: 19 feb 201223 feb 2012
Congresnummer: 59

Congres

Congres59th International Solid-State Circuits Conference, ISSCC 2012
Verkorte titelISSCC 2012
LandVerenigde Staten van Amerika
StadSan Francisco, CA
Periode19/02/1223/02/12
AnderIEEE International Solid-State Circuits Conference (ISSCC 2012)

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  • Citeer dit

    Raiteri, D., Torricelli, F., Myny, K., Nag, M., Van der Putten, B., Smits, E. C. P., Steudel, S., Tempelaars, K., Tripathi, A. K., Gelinck, G. H., Roermund, van, A. H. M., & Cantatore, E. (2012). A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. In Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California (blz. 314-316). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISSCC.2012.6177028