A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

D. Raiteri, F. Torricelli, K. Myny, M. Nag, B. Van der Putten, E.C.P. Smits, S Steudel, K. Tempelaars, A.K. Tripathi, G.H. Gelinck, A.H.M. Roermund, van, E. Cantatore

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

37 Citaten (Scopus)
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Samenvatting

Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ~100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (
Originele taal-2Engels
TitelProceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's314-316
DOI's
StatusGepubliceerd - 2012
Evenement59th IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, Verenigde Staten van Amerika
Duur: 19 feb. 201223 feb. 2012
Congresnummer: 59

Congres

Congres59th IEEE International Solid-State Circuits Conference, ISSCC 2012
Verkorte titelISSCC 2012
Land/RegioVerenigde Staten van Amerika
StadSan Francisco
Periode19/02/1223/02/12
AnderIEEE International Solid-State Circuits Conference (ISSCC 2012)

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