Samenvatting
Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ~100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (
Originele taal-2 | Engels |
---|---|
Titel | Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California |
Plaats van productie | Piscataway |
Uitgeverij | Institute of Electrical and Electronics Engineers |
Pagina's | 314-316 |
DOI's | |
Status | Gepubliceerd - 2012 |
Evenement | 59th IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, Verenigde Staten van Amerika Duur: 19 feb. 2012 → 23 feb. 2012 Congresnummer: 59 |
Congres
Congres | 59th IEEE International Solid-State Circuits Conference, ISSCC 2012 |
---|---|
Verkorte titel | ISSCC 2012 |
Land/Regio | Verenigde Staten van Amerika |
Stad | San Francisco |
Periode | 19/02/12 → 23/02/12 |
Ander | IEEE International Solid-State Circuits Conference (ISSCC 2012) |