A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

Fabio Sebastiano; Lucien Breems; Kofi Makinwa; Salvatore Drago; Domine Leenaerts; Bram Nauta

doi:10.1109/ESSCIRC.2010.5619792

A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

Fabio Sebastiano, Lucien Breems, Kofi Makinwa, Salvatore Drago, Domine Leenaerts, Bram Nauta

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

8 Citaten (Scopus)

Samenvatting

For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 μA from a 1.2-V supply at room temperature.

Originele taal-2	Engels
Titel	ESSCIRC 2010 - 36th European Solid State Circuits Conference
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	102-105
Aantal pagina's	4
ISBN van elektronische versie	978-1-4244-6664-1
ISBN van geprinte versie	978-1-4244-6662-7
DOI's	https://doi.org/10.1109/ESSCIRC.2010.5619792
Status	Gepubliceerd - 2010
Extern gepubliceerd	Ja
Evenement	36th European Solid State Circuits Conference, ESSCIRC 2010 - Sevilla, Spanje Duur: 14 sep. 2010 → 16 sep. 2010

Congres

Congres	36th European Solid State Circuits Conference, ESSCIRC 2010
Land/Regio	Spanje
Stad	Sevilla
Periode	14/09/10 → 16/09/10

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10.1109/ESSCIRC.2010.5619792

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Sebastiano, F., Breems, L., Makinwa, K., Drago, S., Leenaerts, D., & Nauta, B. (2010). A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. In ESSCIRC 2010 - 36th European Solid State Circuits Conference (blz. 102-105). Artikel 5619792 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSCIRC.2010.5619792

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title = "A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks",

abstract = "For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.",

author = "Fabio Sebastiano and Lucien Breems and Kofi Makinwa and Salvatore Drago and Domine Leenaerts and Bram Nauta",

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doi = "10.1109/ESSCIRC.2010.5619792",

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booktitle = "ESSCIRC 2010 - 36th European Solid State Circuits Conference",

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Sebastiano, F, Breems, L, Makinwa, K, Drago, S, Leenaerts, D & Nauta, B 2010, A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. in ESSCIRC 2010 - 36th European Solid State Circuits Conference., 5619792, Institute of Electrical and Electronics Engineers, blz. 102-105, 36th European Solid State Circuits Conference, ESSCIRC 2010, Sevilla, Spanje, 14/09/10. https://doi.org/10.1109/ESSCIRC.2010.5619792

A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. / Sebastiano, Fabio; Breems, Lucien; Makinwa, Kofi et al.
ESSCIRC 2010 - 36th European Solid State Circuits Conference. Institute of Electrical and Electronics Engineers, 2010. blz. 102-105 5619792.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Sebastiano, Fabio

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AU - Drago, Salvatore

AU - Leenaerts, Domine

AU - Nauta, Bram

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N2 - For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

AB - For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

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A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

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