This paper investigates a fully integrated and packaged single CMOS low noise amplifier (LNA) in gap-waveguide structure. The bare die LNA operating in 60 GHz band is implemented in a 40 nm digital CMOS technology. The connection between on-chip ground-signal-ground (GSG) pads and coplanar waveguide (CPW) on RO4350B PCB is achieved by using wire-bonding. The electromagnetic fields are then coupled between a microstrip patch built on the PCB and a ridge waveguide via an off-chip stub section. Field blocking pins are used to provide a resonance free packaging for the chip and to stop any possible radiation from the open-ended coupling stubs. The measurement result show that the system is stable with an average loss of 2.5 dB compared to the on-probe measurement result over the band 57-65 GHz.
|Tijdschrift||IEEE Microwave and Wireless Components Letters|
|Status||In voorbereiding - 21 jun 2021|