A 50 Gbit/s PAM-4 linear burst-mode transimpedance amplifier

Gertjan Coudyzer; Peter Ossieur; Laurens Breyne; Marion Matters; Johan Bauwelinck; Xin Yin

doi:10.1109/LPT.2019.2914317

A 50 Gbit/s PAM-4 linear burst-mode transimpedance amplifier

Gertjan Coudyzer (Corresponding author), Peter Ossieur, Laurens Breyne, Marion Matters, Johan Bauwelinck, Xin Yin

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

22 Citaten (Scopus)

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This letter presents a linear burst-mode transimpedance amplifier (LBMTIA) capable of receiving 50 Gbit/s 4-level pulse amplitude modulation (PAM-4), targeting upstream transmission in high-rate time division multiplexed passive optical networks (TDM-PONs). Using a digitally controlled high-speed datapath, where offset- and gain are corrected using a fast lookup from on-chip stored settings, the receiver achieves a settling time of 48 ns and has an input dynamic range of at least 17.7 dB for 25 Gbit/s non-return-to-zero (NRZ) and 10.9 dB for 50 Gbit/s PAM-4 at the low-density-parity-check (LDPC) forward-error-control (FEC) threshold of 1 × 10^-2 (as now standardized for 25 and 50G TDM-PONs). The LBMTIA is fabricated in the 0.25 um SiGe:C BiCMOS-technology from NXP and consumes 375 mW.

Originele taal-2	Engels
Artikelnummer	8704297
Pagina's (van-tot)	951-954
Aantal pagina's	4
Tijdschrift	IEEE Photonics Technology Letters
Volume	31
Nummer van het tijdschrift	12
DOI's	https://doi.org/10.1109/LPT.2019.2914317
Status	Gepubliceerd - 15 jun. 2019

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@article{4209663f33ec467d89d914db37389273,

title = "A 50 Gbit/s PAM-4 linear burst-mode transimpedance amplifier",

abstract = "This letter presents a linear burst-mode transimpedance amplifier (LBMTIA) capable of receiving 50 Gbit/s 4-level pulse amplitude modulation (PAM-4), targeting upstream transmission in high-rate time division multiplexed passive optical networks (TDM-PONs). Using a digitally controlled high-speed datapath, where offset- and gain are corrected using a fast lookup from on-chip stored settings, the receiver achieves a settling time of 48 ns and has an input dynamic range of at least 17.7 dB for 25 Gbit/s non-return-to-zero (NRZ) and 10.9 dB for 50 Gbit/s PAM-4 at the low-density-parity-check (LDPC) forward-error-control (FEC) threshold of 1 × 10-2 (as now standardized for 25 and 50G TDM-PONs). The LBMTIA is fabricated in the 0.25 um SiGe:C BiCMOS-technology from NXP and consumes 375 mW.",

keywords = "Burst-mode, transimpedance amplifiers, 4-level pulse amplitude modulation, passive optical networks, access networks",

author = "Gertjan Coudyzer and Peter Ossieur and Laurens Breyne and Marion Matters and Johan Bauwelinck and Xin Yin",

year = "2019",

month = jun,

day = "15",

doi = "10.1109/LPT.2019.2914317",

language = "English",

volume = "31",

pages = "951--954",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "12",

}

TY - JOUR

T1 - A 50 Gbit/s PAM-4 linear burst-mode transimpedance amplifier

AU - Coudyzer, Gertjan

AU - Ossieur, Peter

AU - Breyne, Laurens

AU - Matters, Marion

AU - Bauwelinck, Johan

AU - Yin, Xin

PY - 2019/6/15

Y1 - 2019/6/15

N2 - This letter presents a linear burst-mode transimpedance amplifier (LBMTIA) capable of receiving 50 Gbit/s 4-level pulse amplitude modulation (PAM-4), targeting upstream transmission in high-rate time division multiplexed passive optical networks (TDM-PONs). Using a digitally controlled high-speed datapath, where offset- and gain are corrected using a fast lookup from on-chip stored settings, the receiver achieves a settling time of 48 ns and has an input dynamic range of at least 17.7 dB for 25 Gbit/s non-return-to-zero (NRZ) and 10.9 dB for 50 Gbit/s PAM-4 at the low-density-parity-check (LDPC) forward-error-control (FEC) threshold of 1 × 10-2 (as now standardized for 25 and 50G TDM-PONs). The LBMTIA is fabricated in the 0.25 um SiGe:C BiCMOS-technology from NXP and consumes 375 mW.

AB - This letter presents a linear burst-mode transimpedance amplifier (LBMTIA) capable of receiving 50 Gbit/s 4-level pulse amplitude modulation (PAM-4), targeting upstream transmission in high-rate time division multiplexed passive optical networks (TDM-PONs). Using a digitally controlled high-speed datapath, where offset- and gain are corrected using a fast lookup from on-chip stored settings, the receiver achieves a settling time of 48 ns and has an input dynamic range of at least 17.7 dB for 25 Gbit/s non-return-to-zero (NRZ) and 10.9 dB for 50 Gbit/s PAM-4 at the low-density-parity-check (LDPC) forward-error-control (FEC) threshold of 1 × 10-2 (as now standardized for 25 and 50G TDM-PONs). The LBMTIA is fabricated in the 0.25 um SiGe:C BiCMOS-technology from NXP and consumes 375 mW.

KW - Burst-mode

KW - transimpedance amplifiers

KW - 4-level pulse amplitude modulation

KW - passive optical networks

KW - access networks

UR - http://www.scopus.com/inward/record.url?scp=85066616476&partnerID=8YFLogxK

U2 - 10.1109/LPT.2019.2914317

DO - 10.1109/LPT.2019.2914317

M3 - Article

SN - 1041-1135

VL - 31

SP - 951

EP - 954

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

M1 - 8704297

ER -

A 50 Gbit/s PAM-4 linear burst-mode transimpedance amplifier

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