A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS

H. Gao; M. Matters - Kammerer; D. Milosevic; Arthur Roermund, van; P.G.M. Baltus

doi:10.1109/MWSYM.2014.6848466

A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS

H. Gao, M. Matters - Kammerer, D. Milosevic, Arthur Roermund, van, P.G.M. Baltus

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

11 Citaten (Scopus)

6 Downloads (Pure)

Samenvatting

This paper presents a 50 - 60 GHz fully integrated 3-stage rectifier in 65nm CMOS technology. The sensitivity of the rectifier is the limiting factor for an on-chip wireless-powered receiver in CMOS technology. In this paper, the technique of body-drain connection is proposed and implemented. In this method, the parasitic diode is shorted and the threshold voltage of the MOSFET is modulated, improving the sensitivity. Compared to the inductor peaking method [1] and other mm-wave rectifiers [2][3] in CMOS technology, the circuit proposed in this paper achieves high sensitivity and efficiency while maintaining a compact size, because no inductors are used inside the rectifier. The work achieves the peak sensitivity at 52 GHz, providing a 1-V dc output voltage for an input power of -7 dBm. The overall sensitivity over the entire operational range of 50 - 60 GHz is below - 2 dBm.

Originele taal-2	Engels
Titel	Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1-3
DOI's	https://doi.org/10.1109/MWSYM.2014.6848466
Status	Gepubliceerd - 2014

Toegang tot document

10.1109/MWSYM.2014.6848466

Citeer dit

Gao, H., Matters - Kammerer, M., Milosevic, D., Roermund, van, A., & Baltus, P. G. M. (2014). A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS. In Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida (blz. 1-3). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/MWSYM.2014.6848466

@inproceedings{a0455bfe911e4db3a6815f4627b174e4,

title = "A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS",

abstract = "This paper presents a 50 - 60 GHz fully integrated 3-stage rectifier in 65nm CMOS technology. The sensitivity of the rectifier is the limiting factor for an on-chip wireless-powered receiver in CMOS technology. In this paper, the technique of body-drain connection is proposed and implemented. In this method, the parasitic diode is shorted and the threshold voltage of the MOSFET is modulated, improving the sensitivity. Compared to the inductor peaking method [1] and other mm-wave rectifiers [2][3] in CMOS technology, the circuit proposed in this paper achieves high sensitivity and efficiency while maintaining a compact size, because no inductors are used inside the rectifier. The work achieves the peak sensitivity at 52 GHz, providing a 1-V dc output voltage for an input power of -7 dBm. The overall sensitivity over the entire operational range of 50 - 60 GHz is below - 2 dBm.",

author = "H. Gao and {Matters - Kammerer}, M. and D. Milosevic and {Roermund, van}, Arthur and P.G.M. Baltus",

year = "2014",

doi = "10.1109/MWSYM.2014.6848466",

language = "English",

pages = "1--3",

booktitle = "Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Gao, H , Matters - Kammerer, M , Milosevic, D, Roermund, van, A & Baltus, PGM 2014, A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS. in Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida. Institute of Electrical and Electronics Engineers, Piscataway, blz. 1-3. https://doi.org/10.1109/MWSYM.2014.6848466

A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS. / Gao, H.; Matters - Kammerer, M.; Milosevic, D. et al.
Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida. Piscataway: Institute of Electrical and Electronics Engineers, 2014. blz. 1-3.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS

AU - Gao, H.

AU - Matters - Kammerer, M.

AU - Milosevic, D.

AU - Roermund, van, Arthur

AU - Baltus, P.G.M.

PY - 2014

Y1 - 2014

N2 - This paper presents a 50 - 60 GHz fully integrated 3-stage rectifier in 65nm CMOS technology. The sensitivity of the rectifier is the limiting factor for an on-chip wireless-powered receiver in CMOS technology. In this paper, the technique of body-drain connection is proposed and implemented. In this method, the parasitic diode is shorted and the threshold voltage of the MOSFET is modulated, improving the sensitivity. Compared to the inductor peaking method [1] and other mm-wave rectifiers [2][3] in CMOS technology, the circuit proposed in this paper achieves high sensitivity and efficiency while maintaining a compact size, because no inductors are used inside the rectifier. The work achieves the peak sensitivity at 52 GHz, providing a 1-V dc output voltage for an input power of -7 dBm. The overall sensitivity over the entire operational range of 50 - 60 GHz is below - 2 dBm.

AB - This paper presents a 50 - 60 GHz fully integrated 3-stage rectifier in 65nm CMOS technology. The sensitivity of the rectifier is the limiting factor for an on-chip wireless-powered receiver in CMOS technology. In this paper, the technique of body-drain connection is proposed and implemented. In this method, the parasitic diode is shorted and the threshold voltage of the MOSFET is modulated, improving the sensitivity. Compared to the inductor peaking method [1] and other mm-wave rectifiers [2][3] in CMOS technology, the circuit proposed in this paper achieves high sensitivity and efficiency while maintaining a compact size, because no inductors are used inside the rectifier. The work achieves the peak sensitivity at 52 GHz, providing a 1-V dc output voltage for an input power of -7 dBm. The overall sensitivity over the entire operational range of 50 - 60 GHz is below - 2 dBm.

U2 - 10.1109/MWSYM.2014.6848466

DO - 10.1109/MWSYM.2014.6848466

M3 - Conference contribution

SP - 1

EP - 3

BT - Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Gao H , Matters - Kammerer M , Milosevic D, Roermund, van A, Baltus PGM. A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS. In Proceedings of the 2014 IEEE MTT-S International Microwave Symposium (IMS 2014), 1-6 June 2014, Tampa Bay. Florida. Piscataway: Institute of Electrical and Electronics Engineers. 2014. blz. 1-3 doi: 10.1109/MWSYM.2014.6848466

A 50 – 60 GHz rectifier with −7dBm sensitivity for 1 V DC output voltage and 8% efficiency in 65-nm CMOS

Samenvatting

Toegang tot document

Vingerafdruk

Citeer dit