A 48–61 GHz LNA in 40-nm CMOS with 3.6 dB minimum NF employing a metal slotting method

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

25 Citaten (Scopus)
21 Downloads (Pure)

Samenvatting

This paper presents a low noise amplifier realized in 40-nm CMOS technology for the 60 GHz ISM band. To reduce the noise contribution from the input passive structure, a new metal slotting method is applied to the transmission line for increasing the effective conducting cross-section area. The design incorporates additional noise matching between the common-source stage and the common-gate stage to reduce the noise impact by the latter stage. The measured noise figure is below 4 dB from 51 GHz to 65 GHz, 3.6 dB at 55 GHz and 3.8 dB at 60 GHz. The achieved 3 dB power gain bandwidth is 13 GHz, from 48 GHz to 61 GHz. The peak transducer gain (Gt) is 15 dB at 55 GHz, and 12.5 dB at 60 GHz. The total power consumption is 20.4 mW.
Originele taal-2Engels
Titel2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
RedacteurenS. Mehta, L. Lin
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's154-157
Aantal pagina's4
ISBN van elektronische versie978-1-4673-8651-7
ISBN van geprinte versie 978-1-4673-8650-0
DOI's
StatusGepubliceerd - 22 mei 2016
Evenement2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2016) - Moscone Convention Center, San Francisco, Verenigde Staten van Amerika
Duur: 22 mei 201624 mei 2016

Congres

Congres2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2016)
Verkorte titelRFIC 2016
LandVerenigde Staten van Amerika
StadSan Francisco
Periode22/05/1624/05/16

    Vingerafdruk

Citeer dit

Gao, H., Ying, K., Matters-Kammerer, M. K., Harpe, P., Ma, Q., van Roermund, A., & Baltus, P. (2016). A 48–61 GHz LNA in 40-nm CMOS with 3.6 dB minimum NF employing a metal slotting method. In S. Mehta, & L. Lin (editors), 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (blz. 154-157). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RFIC.2016.7508274