A 30GHz 2dB NF low noise amplifier for Ka-band applications

Q. Ma, R. Mahmoudi, D.M.W. Leenaerts

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

18 Citaten (Scopus)

Samenvatting

A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.
Originele taal-2Engels
TitelProceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's25-28
ISBN van geprinte versie978-1-4673-0415-3
DOI's
StatusGepubliceerd - 2012
Evenement2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012) - Montréal, Canada
Duur: 17 jun 201219 jun 2012

Congres

Congres2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)
Verkorte titelRFIC 2012
LandCanada
StadMontréal
Periode17/06/1219/06/12
AnderRadio Frequency Integrated Circuits Symposium (RFIC)

Vingerafdruk Duik in de onderzoeksthema's van 'A 30GHz 2dB NF low noise amplifier for Ka-band applications'. Samen vormen ze een unieke vingerafdruk.

Citeer dit