A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

5 Citaties (Scopus)

Uittreksel

This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

TaalEngels
TitelProceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's288-291
Aantal pagina's4
ISBN van elektronische versie978-1-5386-4545-1
ISBN van geprinte versie978-1-5386-4546-8
DOI's
StatusGepubliceerd - 7 aug 2018
Evenement2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 - Philadelphia, Verenigde Staten van Amerika
Duur: 10 jun 201812 jun 2018

Congres

Congres2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
LandVerenigde Staten van Amerika
StadPhiladelphia
Periode10/06/1812/06/18

Vingerafdruk

Low noise amplifiers
Bandwidth
Transformer windings
BiCMOS technology
Electric power utilization

Trefwoorden

    Citeer dit

    Chen, Z., Gao, H., Leenaerts, D., Milosevic, D., & Baltus, P. (2018). A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. In Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 (blz. 288-291). [8429020] Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.1109/RFIC.2018.8429020
    Chen, Zhe ; Gao, Hao ; Leenaerts, Domine ; Milosevic, Dusan ; Baltus, Peter. / A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. blz. 288-291
    @inproceedings{163c2efcf4b5461e9edf60037565df00,
    title = "A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF",
    abstract = "This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25{\%}) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.",
    keywords = "C BiCMOS, high-gain, low-noise amplifier (LNA), SiGe, transformer, wideband",
    author = "Zhe Chen and Hao Gao and Domine Leenaerts and Dusan Milosevic and Peter Baltus",
    year = "2018",
    month = "8",
    day = "7",
    doi = "10.1109/RFIC.2018.8429020",
    language = "English",
    isbn = "978-1-5386-4546-8",
    pages = "288--291",
    booktitle = "Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018",
    publisher = "Institute of Electrical and Electronics Engineers",
    address = "United States",

    }

    Chen, Z, Gao, H, Leenaerts, D, Milosevic, D & Baltus, P 2018, A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. in Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018., 8429020, Institute of Electrical and Electronics Engineers, Piscataway, blz. 288-291, Philadelphia, Verenigde Staten van Amerika, 10/06/18. DOI: 10.1109/RFIC.2018.8429020

    A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. / Chen, Zhe; Gao, Hao; Leenaerts, Domine; Milosevic, Dusan; Baltus, Peter.

    Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. blz. 288-291 8429020.

    Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

    TY - GEN

    T1 - A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

    AU - Chen,Zhe

    AU - Gao,Hao

    AU - Leenaerts,Domine

    AU - Milosevic,Dusan

    AU - Baltus,Peter

    PY - 2018/8/7

    Y1 - 2018/8/7

    N2 - This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

    AB - This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

    KW - C BiCMOS

    KW - high-gain

    KW - low-noise amplifier (LNA)

    KW - SiGe

    KW - transformer

    KW - wideband

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    U2 - 10.1109/RFIC.2018.8429020

    DO - 10.1109/RFIC.2018.8429020

    M3 - Conference contribution

    SN - 978-1-5386-4546-8

    SP - 288

    EP - 291

    BT - Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018

    PB - Institute of Electrical and Electronics Engineers

    CY - Piscataway

    ER -

    Chen Z, Gao H, Leenaerts D, Milosevic D, Baltus P. A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. In Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway: Institute of Electrical and Electronics Engineers. 2018. blz. 288-291. 8429020. Beschikbaar vanaf, DOI: 10.1109/RFIC.2018.8429020