A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

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Samenvatting

This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

Originele taal-2Engels
TitelProceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's288-291
Aantal pagina's4
ISBN van elektronische versie978-1-5386-4545-1
ISBN van geprinte versie978-1-5386-4546-8
DOI's
StatusGepubliceerd - 7 aug 2018
Evenement2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 - Philadelphia, Verenigde Staten van Amerika
Duur: 10 jun 201812 jun 2018

Congres

Congres2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
LandVerenigde Staten van Amerika
StadPhiladelphia
Periode10/06/1812/06/18

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