A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

J.A.J. Essing; D.M.W. Leenaerts; R. Mahmoudi

doi:10.1109/BCTM.2014.6981301

A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

J.A.J. Essing
, D.M.W. Leenaerts
, R. Mahmoudi

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

17 Citaten (Scopus)

4 Downloads (Pure)

Samenvatting

This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.

Originele taal-2	Engels
Titel	proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA
Pagina's	143-146
DOI's	https://doi.org/10.1109/BCTM.2014.6981301
Status	Gepubliceerd - 2014
Evenement	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA - Coronado Island Marriott Resort & Spa, Coronado, CA, Verenigde Staten van Amerika Duur: 28 sep. 2014 → 1 okt. 2014

Congres

Congres	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA
Verkorte titel	BCTM 2014
Land/Regio	Verenigde Staten van Amerika
Stad	Coronado, CA
Periode	28/09/14 → 1/10/14
Ander	BCTM 2014

Toegang tot document

10.1109/BCTM.2014.6981301

Citeer dit

@inproceedings{eb4b9091891a477785c3468812cb0067,

title = "A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology",

abstract = "This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5\%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13\%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.",

author = "J.A.J. Essing and D.M.W. Leenaerts and R. Mahmoudi",

year = "2014",

doi = "10.1109/BCTM.2014.6981301",

language = "English",

pages = "143--146",

booktitle = "proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA",

note = "2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA, BCTM 2014 ; Conference date: 28-09-2014 Through 01-10-2014",

}

Essing, JAJ, Leenaerts, DMW & Mahmoudi, R 2014, A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology. in proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA. blz. 143-146, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA, Coronado, CA, Verenigde Staten van Amerika, 28/09/14. https://doi.org/10.1109/BCTM.2014.6981301

A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology. / Essing, J.A.J.; Leenaerts, D.M.W.; Mahmoudi, R.
proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA. 2014. blz. 143-146.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

AU - Essing, J.A.J.

AU - Leenaerts, D.M.W.

AU - Mahmoudi, R.

PY - 2014

Y1 - 2014

N2 - This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.

AB - This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.

U2 - 10.1109/BCTM.2014.6981301

DO - 10.1109/BCTM.2014.6981301

M3 - Conference contribution

SP - 143

EP - 146

BT - proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA

T2 - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA

Y2 - 28 September 2014 through 1 October 2014

ER -

A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

Samenvatting

Congres

Toegang tot document

Vingerafdruk

Citeer dit