A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

J.A.J. Essing, D.M.W. Leenaerts, R. Mahmoudi

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

12 Citaten (Scopus)
4 Downloads (Pure)

Samenvatting

This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.
Originele taal-2Engels
Titelproceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA
Pagina's143-146
DOI's
StatusGepubliceerd - 2014
Evenement2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA - Coronado Island Marriott Resort & Spa, Coronado, CA, Verenigde Staten van Amerika
Duur: 28 sep 20141 okt 2014

Congres

Congres2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA
Verkorte titelBCTM 2014
LandVerenigde Staten van Amerika
StadCoronado, CA
Periode28/09/141/10/14
AnderBCTM 2014

Vingerafdruk Duik in de onderzoeksthema's van 'A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology'. Samen vormen ze een unieke vingerafdruk.

  • Citeer dit

    Essing, J. A. J., Leenaerts, D. M. W., & Mahmoudi, R. (2014). A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology. In proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA (blz. 143-146) https://doi.org/10.1109/BCTM.2014.6981301