A 25% Tuning Range 7.5–9.4 GHz Oscillator With 194 FoMT and 400 kHz 1/f₃ Corner in 40nm CMOS Technology

An 8-GHz VCO with class-F23 operation was realized in a 40 nm CMOS technology without ultra-thick metals. The class-F23 operation was enabled in a transformer-based LC tank to allow multiple impedance peaks in the common mode (CM) and the differential mode (DM) excitation. With the additional resonance at $2^{nd}$ and $3^{rd}$ harmonic frequency, the circuit noise to phase-noise conversion and 1/f noise up-conversion are reduced significantly. In a 40 nm CMOS technology without ultra-thick metal, a patterned shielding structure was proposed to improve the inductor quality factor. A combined varactor and capacitor array is proposed to provide accurate matching for a desired resonance frequency ratio, reducing AM-FM conversion and it achieves a broad tuning range. With the proposed transformer-based LC bank and class-F23 operation, the oscillator achieves a phase noise of −150.8 dBc/Hz at 10 MHz offset from a 1.85 GHz carrier after an on-chip /4 divider, and the measured 1/f3 flicker noise corner is around 400 kHz. The oscillator core covers a 7.5–9.4 GHz frequency range for a 25% tuning range.