A 2.18pJ/conversion, 1656um2 Temperature Sensor with a 0.61pJ K2 FoM and 52-pW Stand-By Power

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This letter describes a miniature, ultra low power, all-dynamic temperature sensor based on a duty-cycled resistive transducer bridge and a 9-bit asynchronous SAR ADC in 65-nm CMOS. It features a novel floating bridge technique and automatic power gating to achieve the lowest reported power consumption. It consumes 2.18 pJ per conversion and has an RMS resolution of 0.53 K, leading to an FoM of 0.61 pJ·K 2 . A standby power of 52 pW allows a high power-efficiency, even at low sample rates. It occupies 36×46 μm of chip area and has a sensing range from -20 °C to 120 °C.

Originele taal-2Engels
Pagina's (van-tot)82-85
Aantal pagina's4
TijdschriftIEEE Solid-State Circuits Letters
StatusGepubliceerd - 2020

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