A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

C. Lu; M. Matters - Kammerer; R. Mahmoudi; P.G.M. Baltus

doi:10.1109/MWSYM.2014.6848484

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

C. Lu, M. Matters - Kammerer, R. Mahmoudi, P.G.M. Baltus

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

20 Citaten (Scopus)

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This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

Originele taal-2	Engels
Titel	Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1-4
DOI's	https://doi.org/10.1109/MWSYM.2014.6848484
Status	Gepubliceerd - 2014

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10.1109/MWSYM.2014.6848484

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Lu, C., Matters - Kammerer, M., Mahmoudi, R., & Baltus, P. G. M. (2014). A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications. In Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida (blz. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/MWSYM.2014.6848484

@inproceedings{fd5c3a3f56b547aebc192efcad9d9ca0,

title = "A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications",

abstract = "This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.",

author = "C. Lu and {Matters - Kammerer}, M. and R. Mahmoudi and P.G.M. Baltus",

year = "2014",

doi = "10.1109/MWSYM.2014.6848484",

language = "English",

pages = "1--4",

booktitle = "Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Lu, C, Matters - Kammerer, M, Mahmoudi, R & Baltus, PGM 2014, A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications. in Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida. Institute of Electrical and Electronics Engineers, Piscataway, blz. 1-4. https://doi.org/10.1109/MWSYM.2014.6848484

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications. / Lu, C.; Matters - Kammerer, M.; Mahmoudi, R. et al.
Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida. Piscataway: Institute of Electrical and Electronics Engineers, 2014. blz. 1-4.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

AU - Lu, C.

AU - Matters - Kammerer, M.

AU - Mahmoudi, R.

AU - Baltus, P.G.M.

PY - 2014

Y1 - 2014

N2 - This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

AB - This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

U2 - 10.1109/MWSYM.2014.6848484

DO - 10.1109/MWSYM.2014.6848484

M3 - Conference contribution

SP - 1

EP - 4

BT - Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

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