A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

Peng Zhang; Lin He; Yufeng Guo; Xiaohua Fan; Hao Gao

doi:10.1109/RFIT49453.2020.9226203

A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

Peng Zhang, Lin He, Yufeng Guo, Xiaohua Fan, Hao Gao

Integrated Circuits

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The f{t} and f{max} of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the f{max} whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the C{CE} reduction layout optimization method to increase the output power. This D-band PA achieves a P{1dB} and P{sat} of 0.5 dBm and 7.1 dBm, respectively.

Originele taal-2	Engels
Titel	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	196-198
Aantal pagina's	3
ISBN van elektronische versie	9781728165066
DOI's	https://doi.org/10.1109/RFIT49453.2020.9226203
Status	Gepubliceerd - 16 okt 2020
Evenement	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan Duur: 2 sep 2020 → 4 sep 2020

Congres

Congres	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Land	Japan
Stad	Hiroshima
Periode	2/09/20 → 4/09/20

Toegang tot document

10.1109/RFIT49453.2020.9226203

Link to publication in Scopus

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Citeer dit

@inproceedings{b3a40d6b3d1248a384b97fbd24df44e2,

title = "A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology",

abstract = "In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The f{t} and f{max} of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the f{max} whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the C{CE} reduction layout optimization method to increase the output power. This D-band PA achieves a P{1dB} and P{sat} of 0.5 dBm and 7.1 dBm, respectively. ",

keywords = "D-band, power amplifier, SiGe:C, sub-THz",

author = "Peng Zhang and Lin He and Yufeng Guo and Xiaohua Fan and Hao Gao",

year = "2020",

month = oct,

day = "16",

doi = "10.1109/RFIT49453.2020.9226203",

language = "English",

pages = "196--198",

booktitle = "2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 ; Conference date: 02-09-2020 Through 04-09-2020",

}

Zhang, P, He, L, Guo, Y, Fan, X & Gao, H 2020, A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology. in 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020., 9226203, Institute of Electrical and Electronics Engineers, blz. 196-198, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Hiroshima, Japan, 2/09/20. https://doi.org/10.1109/RFIT49453.2020.9226203

A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology. / Zhang, Peng; He, Lin; Guo, Yufeng; Fan, Xiaohua; Gao, Hao.

2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers, 2020. blz. 196-198 9226203.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - He, Lin

AU - Guo, Yufeng

AU - Fan, Xiaohua

AU - Gao, Hao

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N2 - In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The f{t} and f{max} of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the f{max} whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the C{CE} reduction layout optimization method to increase the output power. This D-band PA achieves a P{1dB} and P{sat} of 0.5 dBm and 7.1 dBm, respectively.

AB - In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The f{t} and f{max} of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the f{max} whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the C{CE} reduction layout optimization method to increase the output power. This D-band PA achieves a P{1dB} and P{sat} of 0.5 dBm and 7.1 dBm, respectively.

KW - D-band

KW - power amplifier

KW - SiGe:C

KW - sub-THz

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