A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

Peng Zhang, Lin He, Yufeng Guo, Xiaohua Fan, Hao Gao

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The f{t} and f{max} of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the f{max} whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the C{CE} reduction layout optimization method to increase the output power. This D-band PA achieves a P{1dB} and P{sat} of 0.5 dBm and 7.1 dBm, respectively.

Originele taal-2Engels
Titel2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's196-198
Aantal pagina's3
ISBN van elektronische versie9781728165066
DOI's
StatusGepubliceerd - 16 okt 2020
Evenement2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan
Duur: 2 sep 20204 sep 2020

Congres

Congres2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
LandJapan
StadHiroshima
Periode2/09/204/09/20

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