Samenvatting
This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.
| Originele taal-2 | Engels |
|---|---|
| Titel | 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan |
| Plaats van productie | Piscataway |
| Uitgeverij | Institute of Electrical and Electronics Engineers |
| Pagina's | 349-352 |
| Aantal pagina's | 4 |
| ISBN van elektronische versie | 978-1-5090-3700-1 |
| ISBN van geprinte versie | 978-1-5090-3699-8 |
| DOI's | |
| Status | Gepubliceerd - 9 nov. 2016 |
| Evenement | 12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Toyama, Japan Duur: 7 nov. 2016 → 9 nov. 2016 Congresnummer: 12 http://www.asscc.org/2016/ |
Congres
| Congres | 12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 |
|---|---|
| Verkorte titel | A-SSCC 2016 |
| Land/Regio | Japan |
| Stad | Toyama |
| Periode | 7/11/16 → 9/11/16 |
| Internet adres |
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