A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

Maja Vidojkovic; Mihai Sanduleanu; Johan van der Tang; Peter Baltus; Arthur van Roermund

doi:10.1109/RFIC.2007.380831

A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

Maja Vidojkovic
, Mihai Sanduleanu
, Johan van der Tang
, Peter Baltus
, Arthur van Roermund

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

20 Citaten (Scopus)

1 Downloads (Pure)

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This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

Originele taal-2	Engels
Titel	Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	53-56
Aantal pagina's	4
ISBN van geprinte versie	1424405319, 9781424405312
DOI's	https://doi.org/10.1109/RFIC.2007.380831
Status	Gepubliceerd - 2 okt. 2007
Evenement	2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007) - Honolulu, Verenigde Staten van Amerika Duur: 3 jun. 2007 → 5 jun. 2007

Congres

Congres	2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007)
Verkorte titel	RFIC 2007
Land/Regio	Verenigde Staten van Amerika
Stad	Honolulu
Periode	3/06/07 → 5/06/07
Ander	RFIC 2007

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@inproceedings{83408f93c55140c28812a6bb40517015,

title = "A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP",

abstract = "This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.",

keywords = "Broadband, Low noise amplifiers, Multi-band, Multimode",

author = "Maja Vidojkovic and Mihai Sanduleanu and \{van der Tang\}, Johan and Peter Baltus and \{van Roermund\}, Arthur",

year = "2007",

month = oct,

day = "2",

doi = "10.1109/RFIC.2007.380831",

language = "English",

isbn = "1424405319",

pages = "53--56",

booktitle = "Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007), RFIC 2007 ; Conference date: 03-06-2007 Through 05-06-2007",

}

Vidojkovic, M, Sanduleanu, M, van der Tang, J, Baltus, P & van Roermund, A 2007, A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP. in Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007., 4266379, Institute of Electrical and Electronics Engineers, Piscataway, blz. 53-56, 2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007), Honolulu, Hawaï, Verenigde Staten van Amerika, 3/06/07. https://doi.org/10.1109/RFIC.2007.380831

A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP. / Vidojkovic, Maja; Sanduleanu, Mihai; van der Tang, Johan et al.
Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007. Piscataway: Institute of Electrical and Electronics Engineers, 2007. blz. 53-56 4266379.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

AU - Vidojkovic, Maja

AU - Sanduleanu, Mihai

AU - van der Tang, Johan

AU - Baltus, Peter

AU - van Roermund, Arthur

PY - 2007/10/2

Y1 - 2007/10/2

N2 - This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

AB - This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

KW - Broadband

KW - Low noise amplifiers

KW - Multi-band

KW - Multimode

UR - https://www.scopus.com/pages/publications/34748846307

U2 - 10.1109/RFIC.2007.380831

DO - 10.1109/RFIC.2007.380831

M3 - Conference contribution

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SN - 9781424405312

SP - 53

EP - 56

BT - Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2007 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2007)

Y2 - 3 June 2007 through 5 June 2007

ER -

A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

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