A 1.2V 10μW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3σ) from -70°C to 125°C

Fabio Sebastiano, Lucien J. Breems, Kofi A.A. Makinwa, Salvatore Drago, Domine M.W. Leenaerts, Bram Nauta

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

38 Citaten (Scopus)

Samenvatting

This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from -70°C to 125°C. This represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize processes [3,4]. The sensor draws 8.3μA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature trim.

Originele taal-2Engels
Titel2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's312-313
Aantal pagina's2
ISBN van elektronische versie978-1-4244-6036-6
ISBN van geprinte versie978-1-4244-6033-5
DOI's
StatusGepubliceerd - 18 mei 2010
Evenement2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - San Francisco, CA, Verenigde Staten van Amerika
Duur: 7 feb 201011 feb 2010

Congres

Congres2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
LandVerenigde Staten van Amerika
StadSan Francisco, CA
Periode7/02/1011/02/10

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