A 107GHz LNA in 65nm CMOS with inductive neutralization and slow-wave transmission lines

C. Lu, Reza Mahmoudi, A.H.M. Roermund, van, Paul van Zeijl

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

4 Citaten (Scopus)
139 Downloads (Pure)

Samenvatting

This paper presents a 107GHz LNA prototype using TSMC 65nm CMOS technology. It explores the limit of the CMOS technology by effectively optimizing the active and passive devices. An improvement of 1.6dB higher maximum stable/available gain (MSG/MAG) on the transistor is achieved around 110GHz by layout optimization and inductor neutralization technique. A high quality factor co-planar waveguide (CPW) transmission line is designed utilizing the slow-wave effect. A quality factor of 23.6 is demonstrated by EM-simulations while taken the consideration of satisfying the stringent layout design rules. Based on the optimization on the active and passive devices, a dual-stage LNA is designed, with a simulated power gain of 10.2dB and noise figure of 8dB at 107GHz, verified by chip-level EM-simulations. The power consumption is 28.2mW.
Originele taal-2Engels
TitelProceedings of the 19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012), 16 November 2012, Eindhoven, The Netherlands
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1-4
ISBN van geprinte versie978-1-4673-2113-6
DOI's
StatusGepubliceerd - 2012
Evenement19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012) - Eindhoven, Nederland
Duur: 16 nov 201216 nov 2012
Congresnummer: 19

Congres

Congres19th IEEE Symposium on Communications and Vehicular Technology in the Benelux (IEEE SCVT 2012)
Verkorte titelIEEE SCVT 2012
LandNederland
StadEindhoven
Periode16/11/1216/11/12
Ander19th IEEE Symposium on Communications and Vehicular Technology in the Benelux

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