A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology

Hao Gao, Jixin Chen, Wei Hong

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology with a silicon integrated waveguide as the sub-THz power combiner. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier array, 1-stage frequency doubler, and an on-chip silicon integrated waveguide power combiner. In this work, a compact power unit is achieved through an on-chip waveguide power combiner. With this compact solution, the area of the core part of this power unit is 200\times 900\mu \mathrm{m}^{2}, and the output power at 0.26 THz is -15 dBm.

Originele taal-2Engels
Titel2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
UitgeverijIEEE Computer Society
Pagina's428-429
Aantal pagina's2
ISBN van elektronische versie9781728166209
DOI's
StatusGepubliceerd - 11 mrt 2021
Evenement45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, Verenigde Staten van Amerika
Duur: 8 nov 202013 nov 2020

Congres

Congres45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
LandVerenigde Staten van Amerika
StadVirtual, Buffalo
Periode8/11/2013/11/20

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