A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power

Hao Gao, Jixin Chen, Wei Hong, Peter Baltus

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Samenvatting

This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler. In an active submillimeter-wave frequency array, the size of the power unit is critical. In this work, a compact power unit is achieved through on-chip broadside transformers. With this compact solution, the area of core part of this power unit is 110 × 900μm 2 and the output power at 0.26 THz is 0 dBm.

Originele taal-2Engels
TitelIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's2
ISBN van elektronische versie978-1-5386-8285-2
DOI's
StatusGepubliceerd - sep 2019
Evenement4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019) - Paris, Frankrijk
Duur: 1 sep 20196 sep 2019
http://www.irmmw-thz2019.org/

Congres

Congres4th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
Verkorte titelIRMMW-THz 2019
LandFrankrijk
StadParis
Periode1/09/196/09/19
Internet adres

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Citeer dit

Gao, H., Chen, J., Hong, W., & Baltus, P. (2019). A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves [8874444] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IRMMW-THz.2019.8874444