60-GHz low-noise VGA and interpolation-based gain cell in a 40-nm CMOS technology

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This paper presents the design and measurement of an interpolation-based low noise and variable gain cell (IBA-cell) in the 60-GHz band, using a 40-nm CMOS technology. The interpolation-based gain cell is designed for an innovative analog beamforming front end, where the array pattern is not only controlled in the phase domain, but also wins the flexibility in the magnitude domain. The circuit specifications are first derived for the application at 60 GHz. Techniques to combine low noise figure (NF) with variable gain tuning are presented focusing on the NF and linearity (IIP₃) on the example of a 60-GHz low noise amplifier and variable gain amplifier. Subsequently, the design and measurement of the whole gain cell (IBA-cell) integrated into a single chip are reported with the technique of a cross-coupled feedback loop to reduce the phase variations over the gain tuning states and enhance the variations of IIP₃. The IBA-cell achieves 15.8-dB maximum gain and 6.5-dB NF at 57 GHz with the gain tuning range from -2 to 15.8 dB and IIP₃ varying from -11.3 to -16 dBm over the gain control range. The IBA-cell consumes a dc power of maximum 54 mA from 1.1 V.
TaalEngels
Pagina's518-532
Aantal pagina's15
TijdschriftIEEE Transactions on Microwave Theory and Techniques
Volume67
Nummer van het tijdschrift2
Vroegere onlinedatum8 jan 2019
DOI's
StatusGepubliceerd - feb 2019

Vingerafdruk

Noise figure
low noise
interpolation
CMOS
Interpolation
Tuning
cells
Low noise amplifiers
Gain control
Beamforming
tuning
Specifications
Feedback
Networks (circuits)
amplifiers
trajectory control
beamforming
linearity
specifications
flexibility

Citeer dit

@article{ded668a69f824624bcb5e835f9b66931,
title = "60-GHz low-noise VGA and interpolation-based gain cell in a 40-nm CMOS technology",
abstract = "This paper presents the design and measurement of an interpolation-based low noise and variable gain cell (IBA-cell) in the 60-GHz band, using a 40-nm CMOS technology. The interpolation-based gain cell is designed for an innovative analog beamforming front end, where the array pattern is not only controlled in the phase domain, but also wins the flexibility in the magnitude domain. The circuit specifications are first derived for the application at 60 GHz. Techniques to combine low noise figure (NF) with variable gain tuning are presented focusing on the NF and linearity (IIP₃) on the example of a 60-GHz low noise amplifier and variable gain amplifier. Subsequently, the design and measurement of the whole gain cell (IBA-cell) integrated into a single chip are reported with the technique of a cross-coupled feedback loop to reduce the phase variations over the gain tuning states and enhance the variations of IIP₃. The IBA-cell achieves 15.8-dB maximum gain and 6.5-dB NF at 57 GHz with the gain tuning range from -2 to 15.8 dB and IIP₃ varying from -11.3 to -16 dBm over the gain control range. The IBA-cell consumes a dc power of maximum 54 mA from 1.1 V.",
author = "Bindi Wang and Hao Gao and {van Dommele}, {A. Rainier} and Matters-Kammerer, {Marion K.} and Baltus, {Peter G.M.}",
year = "2019",
month = "2",
doi = "10.1109/TMTT.2018.2889058",
language = "English",
volume = "67",
pages = "518--532",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers",
number = "2",

}

TY - JOUR

T1 - 60-GHz low-noise VGA and interpolation-based gain cell in a 40-nm CMOS technology

AU - Wang,Bindi

AU - Gao,Hao

AU - van Dommele,A. Rainier

AU - Matters-Kammerer,Marion K.

AU - Baltus,Peter G.M.

PY - 2019/2

Y1 - 2019/2

N2 - This paper presents the design and measurement of an interpolation-based low noise and variable gain cell (IBA-cell) in the 60-GHz band, using a 40-nm CMOS technology. The interpolation-based gain cell is designed for an innovative analog beamforming front end, where the array pattern is not only controlled in the phase domain, but also wins the flexibility in the magnitude domain. The circuit specifications are first derived for the application at 60 GHz. Techniques to combine low noise figure (NF) with variable gain tuning are presented focusing on the NF and linearity (IIP₃) on the example of a 60-GHz low noise amplifier and variable gain amplifier. Subsequently, the design and measurement of the whole gain cell (IBA-cell) integrated into a single chip are reported with the technique of a cross-coupled feedback loop to reduce the phase variations over the gain tuning states and enhance the variations of IIP₃. The IBA-cell achieves 15.8-dB maximum gain and 6.5-dB NF at 57 GHz with the gain tuning range from -2 to 15.8 dB and IIP₃ varying from -11.3 to -16 dBm over the gain control range. The IBA-cell consumes a dc power of maximum 54 mA from 1.1 V.

AB - This paper presents the design and measurement of an interpolation-based low noise and variable gain cell (IBA-cell) in the 60-GHz band, using a 40-nm CMOS technology. The interpolation-based gain cell is designed for an innovative analog beamforming front end, where the array pattern is not only controlled in the phase domain, but also wins the flexibility in the magnitude domain. The circuit specifications are first derived for the application at 60 GHz. Techniques to combine low noise figure (NF) with variable gain tuning are presented focusing on the NF and linearity (IIP₃) on the example of a 60-GHz low noise amplifier and variable gain amplifier. Subsequently, the design and measurement of the whole gain cell (IBA-cell) integrated into a single chip are reported with the technique of a cross-coupled feedback loop to reduce the phase variations over the gain tuning states and enhance the variations of IIP₃. The IBA-cell achieves 15.8-dB maximum gain and 6.5-dB NF at 57 GHz with the gain tuning range from -2 to 15.8 dB and IIP₃ varying from -11.3 to -16 dBm over the gain control range. The IBA-cell consumes a dc power of maximum 54 mA from 1.1 V.

U2 - 10.1109/TMTT.2018.2889058

DO - 10.1109/TMTT.2018.2889058

M3 - Article

VL - 67

SP - 518

EP - 532

JO - IEEE Transactions on Microwave Theory and Techniques

T2 - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 2

ER -