In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of phase-separated blends, taking advantage of the possibility to selectively dissolve the different components is introduced. This method is applied in combination with AFM to investigate a blend of a semiconducting and ferroelectric polymer typically used as active layer in organic ferroelectric resistive switches. It is found that the blend consists of a ferroelectric matrix with three types of embedded semiconductor domains and a thin wetting layer at the bottom electrode. Statistical analysis of the obtained images excludes the presence of a fourth type of domains. The criteria for the applicability of the presented technique are discussed.
|Tijdschrift||Journal of Polymer Science, Part B: Polymer Physics|
|Nummer van het tijdschrift||17|
|Status||Gepubliceerd - 1 sep 2015|
Khikhlovskyi, S., Breemen, van, A. J. J. M., Michels, J. J., Janssen, R. A. J., Gelinck, G., & Kemerink, M. (2015). 3D-morphology reconstruction of nanoscale phase-separation in polymer memory blends. Journal of Polymer Science, Part B: Polymer Physics, 53(17), 1231-1237. https://doi.org/10.1002/polb.23769