36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic; Xi Zhang; Fabrice Blache; Karim Mekhazni; Marion K. Matters-Kammerer; Helene Debregeas; Xaveer Leijtens; Kevin Williams

doi:10.1049/cp.2019.1081

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic, Xi Zhang, Fabrice Blache, Karim Mekhazni, Marion K. Matters-Kammerer, Helene Debregeas, Xaveer Leijtens, Kevin Williams

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

Originele taal-2	Engels
Titel	45th European Conference on Optical Communication, ECOC 2019
Uitgeverij	Institution of Engineering and Technology (IET)
Aantal pagina's	3
ISBN van geprinte versie	978-1-83953-185-9
DOI's	https://doi.org/10.1049/cp.2019.1081
Status	Gepubliceerd - 30 jun. 2020
Evenement	45th European Conference on Optical Communication (ECOC 2019) - Dublin, Ierland Duur: 22 sep. 2019 → 26 sep. 2019 Congresnummer: 45 https://www.ecoc2019.org/

Publicatie series

Naam	IET Conference Publications
Nummer	CP765

Congres

Congres	45th European Conference on Optical Communication (ECOC 2019)
Verkorte titel	ECOC 2019
Land/Regio	Ierland
Stad	Dublin
Periode	22/09/19 → 26/09/19
Internet adres	https://www.ecoc2019.org/

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10.1049/cp.2019.1081

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Trajkovic, M., Zhang, X., Blache, F., Mekhazni, K., Matters-Kammerer, M. K., Debregeas, H., Leijtens, X., & Williams, K. (2020). 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. In 45th European Conference on Optical Communication, ECOC 2019 Artikel 9125809 (IET Conference Publications; Nr. CP765). Institution of Engineering and Technology (IET). https://doi.org/10.1049/cp.2019.1081

@inproceedings{486b922456c04353bce1d1a916bbd50f,

title = "36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms",

abstract = "We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.",

keywords = "Driver Circuits, Optical Modulation, Photonic Integrated Circuits",

author = "Marija Trajkovic and Xi Zhang and Fabrice Blache and Karim Mekhazni and Matters-Kammerer, {Marion K.} and Helene Debregeas and Xaveer Leijtens and Kevin Williams",

year = "2020",

month = jun,

day = "30",

doi = "10.1049/cp.2019.1081",

language = "English",

isbn = "978-1-83953-185-9",

series = "IET Conference Publications",

publisher = "Institution of Engineering and Technology (IET)",

number = "CP765",

booktitle = "45th European Conference on Optical Communication, ECOC 2019",

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note = "45th European Conference on Optical Communication (ECOC 2019), ECOC 2019 ; Conference date: 22-09-2019 Through 26-09-2019",

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Trajkovic, M, Zhang, X, Blache, F, Mekhazni, K, Matters-Kammerer, MK, Debregeas, H, Leijtens, X & Williams, K 2020, 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. in 45th European Conference on Optical Communication, ECOC 2019., 9125809, IET Conference Publications, nr. CP765, Institution of Engineering and Technology (IET), 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ierland, 22/09/19. https://doi.org/10.1049/cp.2019.1081

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. / Trajkovic, Marija; Zhang, Xi; Blache, Fabrice et al.
45th European Conference on Optical Communication, ECOC 2019. Institution of Engineering and Technology (IET), 2020. 9125809 (IET Conference Publications; Nr. CP765).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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T1 - 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

AU - Trajkovic, Marija

AU - Zhang, Xi

AU - Blache, Fabrice

AU - Mekhazni, Karim

AU - Matters-Kammerer, Marion K.

AU - Debregeas, Helene

AU - Leijtens, Xaveer

AU - Williams, Kevin

N1 - Conference code: 45

PY - 2020/6/30

Y1 - 2020/6/30

N2 - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

AB - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

KW - Driver Circuits

KW - Optical Modulation

KW - Photonic Integrated Circuits

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U2 - 10.1049/cp.2019.1081

DO - 10.1049/cp.2019.1081

M3 - Conference contribution

SN - 978-1-83953-185-9

T3 - IET Conference Publications

BT - 45th European Conference on Optical Communication, ECOC 2019

PB - Institution of Engineering and Technology (IET)

T2 - 45th European Conference on Optical Communication (ECOC 2019)

Y2 - 22 September 2019 through 26 September 2019

ER -

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

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