36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Marija Trajkovic, Xi Zhang, Fabrice Blache, Karim Mekhazni, Marion K. Matters-Kammerer, Helene Debregeas, Xaveer Leijtens, Kevin Williams

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We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.
Originele taal-2Engels
Aantal pagina's3
StatusGepubliceerd - 26 sep 2019
EvenementThe 45th European Conference on Optical Communication - Dublin, Ierland
Duur: 22 sep 201926 sep 2019
https://www.ecoc2019.org/

Congres

CongresThe 45th European Conference on Optical Communication
Verkorte titelECOC 2019
LandIerland
StadDublin
Periode22/09/1926/09/19
Internet adres

Vingerafdruk

foundries
modulators
platforms
direct current
photonics
keying
ultrahigh frequencies
electronics
integrated circuits
extinction
assembly
recording
diagrams
wire
modulation
fabrication

Citeer dit

Trajkovic, M., Zhang, X., Blache, F., Mekhazni, K., Matters-Kammerer, M. K., Debregeas, H., ... Williams, K. (2019). 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. Paper gepresenteerd op The 45th European Conference on Optical Communication, Dublin, Ierland.
Trajkovic, Marija ; Zhang, Xi ; Blache, Fabrice ; Mekhazni, Karim ; Matters-Kammerer, Marion K. ; Debregeas, Helene ; Leijtens, Xaveer ; Williams, Kevin. / 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. Paper gepresenteerd op The 45th European Conference on Optical Communication, Dublin, Ierland.3 blz.
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abstract = "We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.",
author = "Marija Trajkovic and Xi Zhang and Fabrice Blache and Karim Mekhazni and Matters-Kammerer, {Marion K.} and Helene Debregeas and Xaveer Leijtens and Kevin Williams",
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Trajkovic, M, Zhang, X, Blache, F, Mekhazni, K, Matters-Kammerer, MK, Debregeas, H, Leijtens, X & Williams, K 2019, '36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms', Paper gepresenteerd op The 45th European Conference on Optical Communication, Dublin, Ierland, 22/09/19 - 26/09/19.

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. / Trajkovic, Marija; Zhang, Xi; Blache, Fabrice; Mekhazni, Karim; Matters-Kammerer, Marion K.; Debregeas, Helene; Leijtens, Xaveer; Williams, Kevin.

2019. Paper gepresenteerd op The 45th European Conference on Optical Communication, Dublin, Ierland.

Onderzoeksoutput: Bijdrage aan congresPaper

TY - CONF

T1 - 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

AU - Trajkovic, Marija

AU - Zhang, Xi

AU - Blache, Fabrice

AU - Mekhazni, Karim

AU - Matters-Kammerer, Marion K.

AU - Debregeas, Helene

AU - Leijtens, Xaveer

AU - Williams, Kevin

PY - 2019/9/26

Y1 - 2019/9/26

N2 - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

AB - We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms. The driver is fabricated in a 0.25 μm SiGe:C BiCMOS technology and delivers a maximum of 2 Vp-p amplitude when single-ended. The driver is DC-coupled to the modulator, simplifying the electronic-photonic assembly. The EAM operates in the L-band at 1590 nm, with a DC bias set at –1.6 V for on-off keying non-return to zero modulation. We measure the operation from 10 to 40 Gb/s, recording the dynamic extinction ratio from 5 to 3 dB, respectively. The use of foundry platforms does not require any fabrication process change and offers a wide spectrum of high-performance photonic-electronic integrated circuits.

M3 - Paper

ER -

Trajkovic M, Zhang X, Blache F, Mekhazni K, Matters-Kammerer MK, Debregeas H et al. 36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms. 2019. Paper gepresenteerd op The 45th European Conference on Optical Communication, Dublin, Ierland.