320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

A. Albores Mejia; F. Gomez-Agis; H.J.S. Dorren; X.J.M. Leijtens; M.K. Smit; D.J. Robbins; K.A. Williams

320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

A. Albores Mejia, F. Gomez-Agis, H.J.S. Dorren, X.J.M. Leijtens, M.K. Smit, D.J. Robbins, K.A. Williams

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.

Originele taal-2	Engels
Titel	Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	We.7.E.1-1/4
ISBN van geprinte versie	978-1-4244-8535-2
Status	Gepubliceerd - 2010

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Albores Mejia, A., Gomez-Agis, F., Dorren, H. J. S., Leijtens, X. J. M., Smit, M. K., Robbins, D. J., & Williams, K. A. (2010). 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. In Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy (blz. We.7.E.1-1/4). Institute of Electrical and Electronics Engineers.

Albores Mejia, A. ; Gomez-Agis, F. ; Dorren, H.J.S. et al. / 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Piscataway : Institute of Electrical and Electronics Engineers, 2010. blz. We.7.E.1-1/4

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title = "320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit",

abstract = "Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.",

author = "{Albores Mejia}, A. and F. Gomez-Agis and H.J.S. Dorren and X.J.M. Leijtens and M.K. Smit and D.J. Robbins and K.A. Williams",

year = "2010",

language = "English",

isbn = "978-1-4244-8535-2",

pages = "We.7.E.1--1/4",

booktitle = "Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Albores Mejia, A , Gomez-Agis, F, Dorren, HJS, Leijtens, XJM , Smit, MK, Robbins, DJ & Williams, KA 2010, 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. in Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Institute of Electrical and Electronics Engineers, Piscataway, blz. We.7.E.1-1/4.

320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. / Albores Mejia, A.; Gomez-Agis, F.; Dorren, H.J.S. et al.
Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Piscataway: Institute of Electrical and Electronics Engineers, 2010. blz. We.7.E.1-1/4.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

AU - Albores Mejia, A.

AU - Gomez-Agis, F.

AU - Dorren, H.J.S.

AU - Leijtens, X.J.M.

AU - Smit, M.K.

AU - Robbins, D.J.

AU - Williams, K.A.

PY - 2010

Y1 - 2010

N2 - Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.

AB - Record 320Gb/s data serial line rate routing is demonstrated for a multistage integrated optoelectronic switching circuit using semiconductor optical amplifiers. Power penalties of only 2.2dB are achieved in up to four stages of monolithically integrated crossbar switch elements.

M3 - Conference contribution

SN - 978-1-4244-8535-2

SP - We.7.E.1-1/4

BT - Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Albores Mejia A , Gomez-Agis F, Dorren HJS, Leijtens XJM , Smit MK, Robbins DJ et al. 320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit. In Proceedings of the 36th European Conference and Exhibition on Optical Communication, ECOC 2010, September 19-23, 2010, Torino, Italy. Piscataway: Institute of Electrical and Electronics Engineers. 2010. blz. We.7.E.1-1/4

320Gb/s data routing in a monolithic multistage semiconductor optical amplifier switching circuit

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