30GHz SiGe Monolithic LNA

J. Costa Freire; R. Mahmoudi; A.H.M. Roermund, van

30GHz SiGe Monolithic LNA

J. Costa Freire
, R. Mahmoudi
, A.H.M. Roermund, van

Integrated Circuits

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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In this paper a study of the performance of SiGe QUBiC4G technology to be used on 30GHz LNAs is presented. The best HBT for this purpose is selected. For this HBT and IC bias current leading to NFmin, simple LNAs were designed: common emitter with resistive and inductive bias; and cascode. The results show the possibility of using the QUBiC4G technology, optimised for low microwave applications (few GHz), at the low millimeter wave band - NF 5dB, G 5dB per HBT.

Originele taal-2	Engels
Titel	Proceedings of the 15th ProRISC, Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004) 25 - 26 November 2004, Veldhoven, the Netherlands
Plaats van productie	Utrecht, the Netherlands
Uitgeverij	STW Technology Foundation
Pagina's	478-482
ISBN van geprinte versie	90-73461-43-X
Status	Gepubliceerd - 2004
Evenement	2004 Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004) - Veldhoven, Nederland Duur: 25 nov. 2004 → 26 nov. 2004

Congres

Congres	2004 Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004)
Verkorte titel	ProRISC 2004
Land/Regio	Nederland
Stad	Veldhoven
Periode	25/11/04 → 26/11/04
Ander	ProRISC 2004, Veldhoven, the Netherlands

Citeer dit

@inproceedings{81022f07b06845a98c8744bed3f06f2e,

title = "30GHz SiGe Monolithic LNA",

abstract = "In this paper a study of the performance of SiGe QUBiC4G technology to be used on 30GHz LNAs is presented. The best HBT for this purpose is selected. For this HBT and IC bias current leading to NFmin, simple LNAs were designed: common emitter with resistive and inductive bias; and cascode. The results show the possibility of using the QUBiC4G technology, optimised for low microwave applications (few GHz), at the low millimeter wave band - NF 5dB, G 5dB per HBT.",

author = "\{Costa Freire\}, J. and R. Mahmoudi and \{Roermund, van\}, A.H.M.",

year = "2004",

language = "English",

isbn = "90-73461-43-X",

pages = "478--482",

booktitle = "Proceedings of the 15th ProRISC, Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004) 25 - 26 November 2004, Veldhoven, the Netherlands",

publisher = "STW Technology Foundation",

note = "2004 Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004), ProRISC 2004 ; Conference date: 25-11-2004 Through 26-11-2004",

}

Costa Freire, J, Mahmoudi, R & Roermund, van, AHM 2004, 30GHz SiGe Monolithic LNA. in Proceedings of the 15th ProRISC, Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004) 25 - 26 November 2004, Veldhoven, the Netherlands. STW Technology Foundation, Utrecht, the Netherlands, blz. 478-482, 2004 Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004), Veldhoven, Nederland, 25/11/04.

30GHz SiGe Monolithic LNA. / Costa Freire, J.; Mahmoudi, R.; Roermund, van, A.H.M.
Proceedings of the 15th ProRISC, Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004) 25 - 26 November 2004, Veldhoven, the Netherlands. Utrecht, the Netherlands: STW Technology Foundation, 2004. blz. 478-482.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - 30GHz SiGe Monolithic LNA

AU - Costa Freire, J.

AU - Mahmoudi, R.

AU - Roermund, van, A.H.M.

PY - 2004

Y1 - 2004

N2 - In this paper a study of the performance of SiGe QUBiC4G technology to be used on 30GHz LNAs is presented. The best HBT for this purpose is selected. For this HBT and IC bias current leading to NFmin, simple LNAs were designed: common emitter with resistive and inductive bias; and cascode. The results show the possibility of using the QUBiC4G technology, optimised for low microwave applications (few GHz), at the low millimeter wave band - NF 5dB, G 5dB per HBT.

AB - In this paper a study of the performance of SiGe QUBiC4G technology to be used on 30GHz LNAs is presented. The best HBT for this purpose is selected. For this HBT and IC bias current leading to NFmin, simple LNAs were designed: common emitter with resistive and inductive bias; and cascode. The results show the possibility of using the QUBiC4G technology, optimised for low microwave applications (few GHz), at the low millimeter wave band - NF 5dB, G 5dB per HBT.

M3 - Conference contribution

SN - 90-73461-43-X

SP - 478

EP - 482

BT - Proceedings of the 15th ProRISC, Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004) 25 - 26 November 2004, Veldhoven, the Netherlands

PB - STW Technology Foundation

CY - Utrecht, the Netherlands

T2 - 2004 Annual Workshop on Circuits, Systems and Signal Processing (ProRISC 2004)

Y2 - 25 November 2004 through 26 November 2004

ER -

30GHz SiGe Monolithic LNA

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