2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

C.J..J. Dachs, M. A. Verheijen, M. Kaiser, P. A. Stolk, Y. V. Ponomarev

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Citaat (Scopus)

Samenvatting

In this paper the possibilities for quantitative determination of 2D dope profiles in advanced CMOS technologies are investigated using selective etching in combination with TEM, SIMS and AFM. Promising results were obtained for As. For B an etch-rate dependence on the steepness of the B concentration gradient and influence of the background channel doping (As and P) seem to trouble quantification. A comparison between the measured and simulated (TSUPREM4) 2D profile of a 0.18ìm NMOST is presented.

Originele taal-2Engels
TitelESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's360-363
Aantal pagina's4
ISBN van geprinte versie9782863322482
DOI's
StatusGepubliceerd - 1 jan 2000
Extern gepubliceerdJa
Evenement30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ierland
Duur: 11 sep 200013 sep 2000

Congres

Congres30th European Solid-State Device Research Conference, ESSDERC 2000
LandIerland
StadCork
Periode11/09/0013/09/00

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