1/f Noise sources

F.N. Hooge

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This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices
Originele taal-2Engels
Pagina's (van-tot)1926-1935
Aantal pagina's10
TijdschriftIEEE Transactions on Electron Devices
StatusGepubliceerd - 1994


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