1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

Material Science

• Grain Boundary 100%
• Semiconductor Material 50%
• Carrier Concentration 50%
• Molecular Beam Epitaxy 50%
• Crystalline Material 50%
• Hall Mobility 50%
• Silicon Wafer 50%
• Transmission Electron Microscopy 50%
• Ion Implantation 50%
• Low Pressure Chemical Vapor Deposition 50%
• Boron 50%

Engineering

• Polycrystalline 100%
• Depletion Region 66%
• Grain Boundary 66%
• Transmissions 33%
• Chemical Vapor Deposition 33%
• Ion Implantation 33%
• Carrier Density 33%
• Neutral Region 33%
• Crystalline Semiconductor Material 33%
• Room Temperature 33%
• Vapor Deposition 33%
• Silicon Wafer 33%