1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

X.Y. Chen, C. Salm, F.N. Hooge, P.H. Woerlee

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

14 Citaten (Scopus)

Toegang tot document

@article{4967a6afded14f1c9137923c7d31558a,

title = "1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations",

author = "X.Y. Chen and C. Salm and F.N. Hooge and P.H. Woerlee",

year = "1999",

doi = "10.1016/S0038-1101(99)00136-7",

language = "English",

volume = "43",

pages = "1715--1724",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

}