1/f noise as function of thickness in Al-doped ZnO thin films

A. Achahour, G. Leroy, N. Waldhoff, B. Ayachi, K. Blary, J.-P. Vilcot, L.K.J. Vandamme

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The ratio K = Cus/Rsh is proportional to t2, which indicates that mobility and the noise parameter αH shrink with a shrinking thickness.

Originele taal-2Engels
Titel2017 International Conference on Noise and Fluctuations, ICNF 2017
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's4
ISBN van elektronische versie978-1-5090-2760-6
DOI's
StatusGepubliceerd - 19 jul 2017
Evenement2017 International Conference on Noise and Fluctuations, ICNF 2017 - Vilnius, Litouwen
Duur: 20 jun 201723 jun 2017

Congres

Congres2017 International Conference on Noise and Fluctuations, ICNF 2017
LandLitouwen
StadVilnius
Periode20/06/1723/06/17

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  • Citeer dit

    Achahour, A., Leroy, G., Waldhoff, N., Ayachi, B., Blary, K., Vilcot, J-P., & Vandamme, L. K. J. (2017). 1/f noise as function of thickness in Al-doped ZnO thin films. In 2017 International Conference on Noise and Fluctuations, ICNF 2017 [7986000] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICNF.2017.7986000