1.55-µm range InAs-InP (100) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides

Y. Barbarin, S. Anantathanasarn, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, R. Nötzel

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Samenvatting

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Pérot and ring lasers, lasing in the 1.55-µm wavelength range and employing narrow deeply etched ridge waveguides (1.65 µm width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used
Originele taal-2Engels
Pagina's (van-tot)2644-2646
Aantal pagina's3
TijdschriftIEEE Photonics Technology Letters
Volume18
Nummer van het tijdschrift24
DOI's
StatusGepubliceerd - 2006

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