11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

M.C.J.C.M. Krämer, F. Karouta, J.J.M. Kwaspen, M. Rudzinski, P.K. Larsen, E.M. Suiker, A.P. Hek, de, T. Rödle, I. Volokhine, L.M.F. Kaufmann

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer.
Originele taal-2Engels
TitelProceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)
Plaats van productieHonolulu, Hawaii
Pagina's169-179
StatusGepubliceerd - 2008
Evenement214th Electrochemical Society Meeting (ECS 2008) -
Duur: 12 okt 200817 okt 2008

Congres

Congres214th Electrochemical Society Meeting (ECS 2008)
Periode12/10/0817/10/08
Ander214th Meeting of the Electrochemical Society

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