-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

H. Chen; P. Verheyen; P. de Heyn; G. Lepage; J. de Coster; W. Yao; L. Shen; G.C. Roelkens; J. van Campenhout

doi:10.1364/OE.24.004622

-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

H. Chen, P. Verheyen, P. de Heyn, G. Lepage, J. de Coster, W. Yao, L. Shen, G.C. Roelkens, J. van Campenhout

Photonic Integration

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

Originele taal-2	Engels
Pagina's (van-tot)	4622-4631
Tijdschrift	Optics Express
Volume	24
Nummer van het tijdschrift	5
DOI's	https://doi.org/10.1364/OE.24.004622
Status	Gepubliceerd - 24 feb. 2016

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10.1364/OE.24.004622

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title = "-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond",

abstract = "We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.",

author = "H. Chen and P. Verheyen and {de Heyn}, P. and G. Lepage and {de Coster}, J. and W. Yao and L. Shen and G.C. Roelkens and {van Campenhout}, J.",

year = "2016",

month = feb,

day = "24",

doi = "10.1364/OE.24.004622",

language = "English",

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T1 - -1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

AU - Chen, H.

AU - Verheyen, P.

AU - de Heyn, P.

AU - Lepage, G.

AU - de Coster, J.

AU - Yao, W.

AU - Shen, L.

AU - Roelkens, G.C.

AU - van Campenhout, J.

PY - 2016/2/24

Y1 - 2016/2/24

N2 - We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

AB - We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

U2 - 10.1364/OE.24.004622

DO - 10.1364/OE.24.004622

M3 - Article

C2 - 29092290

SN - 1094-4087

VL - 24

SP - 4622

EP - 4631

JO - Optics Express

JF - Optics Express

IS - 5

ER -

-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

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