• 1816 Citaties
20052020

Research output per year

Als u wijzigingen in Pure hebt gemaakt, zullen deze hier binnenkort zichtbaar zijn.

Persoonlijk profiel

Quote

“Atomic scale processing using plasmas and atomic layer deposition has the wonderful mix of requiring more fundamental understanding and being industrially relevant.”

Research profile

Harm Knoops is a part-time Assistant Professor in the Department of Applied Physics, Plasma & Materials Processing at Eindhoven University of Technology (TU/e). In addition, Knoops is an Atomic Scale Segment Specialist for Oxford Instruments Plasma Technology (OIPT). His current work covers the fields of (plasma-based) synthesis of thin films, advanced diagnostics and understanding and developing plasma ALD. His main goals are to improve and advance ALD processes and applications for Oxford Instruments and its customers. His recent advances in applying RF substrate biasing during plasma ALD and the growth of 2D-MoS2 by plasma ALD have been well-received by the field.  

Furthermore, Knoops aims at a better understanding and utilization of plasma processes for plasma ALD and related applications and processes and is also involved in understanding growth of 2D materials and atomic layer etching (ALE). Knoops has 40 published papers in peer-reviewed journals with 9 papers as first author, 1 of which is a review paper. He has an H-index of 22 (Web of Science www.isiknowledge.com/wos) and 1126 citations in peer-reviewed journals.

Academic background

Harm Knoops obtained his PhD degree in Applied Physics at Eindhoven University of Technology in 2011 with his thesis titled Atomic Layer Deposition: From Reaction Mechanisms to 3D-integrated Micro-batteries. In a work visit during his PhD to Argonne National Labs (USA), he focused on loss processes in ozone-based ALD and linked these to a similar mechanism in plasma ALD. Prior to joining OIPT in the beginning of 2014, he spent several years in post-doc positions related to plasma processing, solar cells and ALD. After his postdoc and while working at OIPT and TU/e he has focused on advancing the deposition and understanding in the ALD of nitrides which led to improvement of silicon nitride ALD and the understanding of redeposition effects in plasma ALD.

Externe posities

Atomic Scale Segment Specialist, Oxford Instruments Plasma Technology

1 jan 2014 → …

Vingerafdruk Verdiep u in de onderzoeksgebieden waarop Harm C.M. Knoops actief is. Deze onderwerplabels komen uit het werk van deze persoon. Samen vormen ze een unieke vingerafdruk.

  • 13 Soortgelijke profielen

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Onderzoeksoutput

Atomic layer deposition for nanostructured Li-ion batteries

Knoops, H. C. M., Donders, M. E., Sanden, van de, M. C. M., Notten, P. H. L. & Kessels, W. M. M., 2012, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films. 30, 1, blz. 010801-1/10 10 blz., 010801.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Open Access
Bestand
  • 72 Citaten (Scopus)
    142 Downloads (Pure)

    Surface loss in ozone-based atomic layer deposition processes

    Knoops, H. C. M., Elam, J. W., Libera, J. A. & Kessels, W. M. M., 2011, In : Chemistry of Materials. 23, 9, blz. 2381-2387

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

  • 50 Citaten (Scopus)
    1 Downloads (Pure)

    Conformality of plasma-assisted ALD: physical processes and modeling

    Knoops, H. C. M., Langereis, E., Sanden, van de, M. C. M. & Kessels, W. M. M., 2010, In : Journal of the Electrochemical Society. 157, 12, blz. G241-G249

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

    Open Access
    Bestand
  • 114 Citaten (Scopus)
    344 Downloads (Pure)

    Redeposition in plasma-assisted atomic layer deposition : silicon nitride film quality ruled by the gas residence time

    Knoops, H. C. M., de Peuter, K. & Kessels, W. M. M., 2015, In : Applied Physics Letters. 107, blz. 014102 4 blz.

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

    Open Access
    Bestand
  • 33 Citaten (Scopus)
    263 Downloads (Pure)
  • 1 Downloads (Pure)

    Cursussen

    Knipsels

    Scriptie

    Atomic layer deposition of Pt and its combination with electron beam induced deposition for the fabrication of nanostructures

    Auteur: Mackus, A., 30 apr 2009

    Begeleider: Knoops, H. (Afstudeerdocent 1), Mulders, J. (Externe coach) & Kessels, W. (Afstudeerdocent 2)

    Scriptie/masterproef: Master

    Bestand

    Development and understanding of a plasma-assisted atomic layer deposition process for silicon nitride

    Auteur: Braeken, E., 31 aug 2013

    Begeleider: Knoops, H. (Afstudeerdocent 1), Potts, S. (Afstudeerdocent 2) & Kessels, W. (Afstudeerdocent 2)

    Scriptie/masterproef: Master

    Bestand

    Functional analysis of retarding field energy analyzers for ion energy distribution measurements in plasma enhanced atomic layer deposition

    Auteur: Buiter, J. W., 2018

    Begeleider: Arts, K. (Afstudeerdocent 1), Kessels, W. (. (Afstudeerdocent 2) & Knoops, H. C. (Afstudeerdocent 2)

    Scriptie/masterproef: Master

    Bestand

    Low temperature plasma-deposited aluminium-doped zinc oxide for CIGS solar cells

    Auteur: Mittal, A., 31 okt 2013

    Begeleider: Knoops, H. (Afstudeerdocent 1), Sharma, K. (Afstudeerdocent 2) & Creatore, M. (Afstudeerdocent 2)

    Scriptie/masterproef: Master

    Low-temperature plasma-deposited aluminum-doped zinc oxide for CIGS solar cells: towards better material properties and solar-cell efficiencies

    Auteur: Goertz, J., 2013

    Begeleider: Knoops, H. (Afstudeerdocent 1), Sharma, K. (Afstudeerdocent 2) & Creatore, M. (Afstudeerdocent 2)

    Scriptie/masterproef: Bachelor

    Bestand