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Persoonlijk profiel

Quote

“Atomic scale processing using plasmas and atomic layer deposition has the wonderful mix of requiring more fundamental understanding and being industrially relevant.”

Research profile

Harm Knoops is a part-time Assistant Professor in the Department of Applied Physics, Plasma & Materials Processing at Eindhoven University of Technology (TU/e). In addition, Knoops is an Atomic Scale Segment Specialist for Oxford Instruments Plasma Technology (OIPT). His current work covers the fields of (plasma-based) synthesis of thin films, advanced diagnostics and understanding and developing plasma ALD. His main goals are to improve and advance ALD processes and applications for Oxford Instruments and its customers. His recent advances in applying RF substrate biasing during plasma ALD and the growth of 2D-MoS2 by plasma ALD have been well-received by the field.  

Furthermore, Knoops aims at a better understanding and utilization of plasma processes for plasma ALD and related applications and processes and is also involved in understanding growth of 2D materials and atomic layer etching (ALE). Knoops has 40 published papers in peer-reviewed journals with 9 papers as first author, 1 of which is a review paper. He has an H-index of 22 (Web of Science www.isiknowledge.com/wos) and 1126 citations in peer-reviewed journals.

Academic background

Harm Knoops obtained his PhD degree in Applied Physics at Eindhoven University of Technology in 2011 with his thesis titled Atomic Layer Deposition: From Reaction Mechanisms to 3D-integrated Micro-batteries. In a work visit during his PhD to Argonne National Labs (USA), he focused on loss processes in ozone-based ALD and linked these to a similar mechanism in plasma ALD. Prior to joining OIPT in the beginning of 2014, he spent several years in post-doc positions related to plasma processing, solar cells and ALD. After his postdoc and while working at OIPT and TU/e he has focused on advancing the deposition and understanding in the ALD of nitrides which led to improvement of silicon nitride ALD and the understanding of redeposition effects in plasma ALD.

Externe posities

Atomic Scale Segment Specialist, Oxford Instruments Plasma Technology

1 jan 2014 → …

Vingerafdruk Duik in de onderzoeksthema's waar Harm C.M. Knoops actief is. Deze onderwerplabels komen voort uit het werk van deze persoon. Samen vormen ze een unieke vingerafdruk.

  • 14 Vergelijkbare profielen
Atomic layer deposition Chemische stoffen
atomic layer epitaxy Fysica en Astronomie
Plasmas Engineering en materiaalwetenschappen
Plasma deposition Engineering en materiaalwetenschappen
Thin films Engineering en materiaalwetenschappen
Silicon nitride Engineering en materiaalwetenschappen
ellipsometry Fysica en Astronomie
electric batteries Fysica en Astronomie

Netwerk Recente externe samenwerking op landenniveau. Duik in de details door op de stippen te klikken.

Onderzoeksoutput 2005 2019

72 Citaties (Scopus)
135 Downloads (Pure)

Atomic layer deposition for nanostructured Li-ion batteries

Knoops, H. C. M., Donders, M. E., Sanden, van de, M. C. M., Notten, P. H. L. & Kessels, W. M. M., 2012, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films. 30, 1, blz. 010801-1/10 10 blz., 010801.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Open Access
Bestand
Atomic layer deposition
atomic layer epitaxy
electric batteries
ions
Electrodes
50 Citaties (Scopus)
1 Downloads (Pure)

Surface loss in ozone-based atomic layer deposition processes

Knoops, H. C. M., Elam, J. W., Libera, J. A. & Kessels, W. M. M., 2011, In : Chemistry of Materials. 23, 9, blz. 2381-2387

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Atomic layer deposition
Ozone
Aspect ratio
Mass spectrometers
Film growth
114 Citaties (Scopus)
331 Downloads (Pure)

Conformality of plasma-assisted ALD: physical processes and modeling

Knoops, H. C. M., Langereis, E., Sanden, van de, M. C. M. & Kessels, W. M. M., 2010, In : Journal of the Electrochemical Society. 157, 12, blz. G241-G249

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Open Access
Bestand
Atomic layer deposition
Aspect ratio
Plasmas
Metals
Oxides
33 Citaties (Scopus)
260 Downloads (Pure)

Redeposition in plasma-assisted atomic layer deposition : silicon nitride film quality ruled by the gas residence time

Knoops, H. C. M., de Peuter, K. & Kessels, W. M. M., 2015, In : Applied Physics Letters. 107, blz. 014102 4 blz.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Open Access
Bestand
atomic layer epitaxy
silicon nitrides
gases
reaction products
transistors
10 Citaties (Scopus)
3 Downloads (Pure)

Energetic Ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties

Faraz, T., Arts, K., Karwal, S., Knoops, H. C. M. & Kessels, W. M. M., 28 feb 2019, In : Plasma Sources Science and Technology. 28, 2, 19 blz., 024002.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

atomic layer epitaxy
ions
energy
dosage
energy distribution

Cursussen

Pers/media

Scriptie

Atomic layer deposition of Pt and its combination with electron beam induced deposition for the fabrication of nanostructures

Auteur: Mackus, A., 30 apr 2009

Begeleider: Knoops, H. (Afstudeerdocent 1), Mulders, J. (Externe coach) & Kessels, W. (Afstudeerdocent 2)

Scriptie/masterproef: Master

Bestand

Development and understanding of a plasma-assisted atomic layer deposition process for silicon nitride

Auteur: Braeken, E., 31 aug 2013

Begeleider: Knoops, H. (Afstudeerdocent 1), Potts, S. (Afstudeerdocent 2) & Kessels, W. (Afstudeerdocent 2)

Scriptie/masterproef: Master

Bestand

Functional analysis of retarding field energy analyzers for ion energy distribution measurements in plasma enhanced atomic layer deposition

Auteur: Buiter, J. W., 2018

Begeleider: Arts, K. (Afstudeerdocent 1), Kessels, W. (. (Afstudeerdocent 2) & Knoops, H. C. (Afstudeerdocent 2)

Scriptie/masterproef: Master

Bestand

Low temperature plasma-deposited aluminium-doped zinc oxide for CIGS solar cells

Auteur: Mittal, A., 31 okt 2013

Begeleider: Knoops, H. (Afstudeerdocent 1), Sharma, K. (Afstudeerdocent 2) & Creatore, M. (Afstudeerdocent 2)

Scriptie/masterproef: Master

Low-temperature plasma-deposited aluminum-doped zinc oxide for CIGS solar cells: towards better material properties and solar-cell efficiencies

Auteur: Goertz, J., 2013

Begeleider: Knoops, H. (Afstudeerdocent 1), Sharma, K. (Afstudeerdocent 2) & Creatore, M. (Afstudeerdocent 2)

Scriptie/masterproef: Bachelor

Bestand