Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor based on Inductively Coupled Plasma (ICP) source. It is used for the deposition of Si3N4, SiO2 and a-Si:H. Wafer handling up to 4”. Equipped with a loadlock chamber. Automatic pressure control and turbo pump. Process monitoring available with in-situ ellipsometry. Process temperature from 20°C up to 400°C.