Investigators at Eindhoven University of Technology Discuss Findings in Applied Physics [Isotropic Atomic Layer Etching of Gan Using Sf6 Plasma and Al(Ch3)(3)]

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• Titel	Investigators at Eindhoven University of Technology Discuss Findings in Applied Physics [Isotropic Atomic Layer Etching of Gan Using Sf6 Plasma and Al(Ch3)(3)]
  Media naam/outlet	Physics Daily News
  Release datum	22/09/23
  Personen	Harm C.M. Knoops, Adrie J.M. Mackus