Parasitic Effects from Cooling of GaN Power Transistors

  • B.P. (Pelle) Weiler (Spreker)

Activiteit: Types gesprekken of presentatiesGenodigd sprekerWetenschappelijk

Beschrijving

With the fast switching transients of GaN, seemingly small parasitic components can have a large impact on system performance. An insulated thermal interface, normally excluded from device characterization, adds a parasitic capacitance and leads to a noticeable increase in device current during turn-on. Straight-forward analytic solutions allow quick design of thermal interfaces using industry-standard insulated metal substrates. The impact of various sized interfaces on switching performance is shown with a double-pulse setup.
Periode14 jun. 2022
EvenementstitelPower Electronics & Energy Storage event
EvenementstypeCongres
LocatieDen Bosch, NederlandToon op kaart
Mate van erkenningNationaal