Defect characterisation in GaN and AlGaN
: using both Lock-in amplifier DLTS and Laplace DLTS

  • H.A. van Laarhoven

Student thesis: Master

Abstract

Date of Award31 Dec 2002
Original languageEnglish
SupervisorC.F.J. (Kees) Flipse (Supervisor 1) & H.H. Brongersma (Supervisor 2)

Cite this

'