Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires

M.H.M. Weert, van; A. Helman; W. Einden, Van Den; R.E. Algra; M.A. Verheijen; M.T. Borgström; W.G.G. Immink; J.J. Kelly; L.P. Kouwenhoven; E.P.A.M. Bakkers

doi:10.1021/ja809871j

Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires

M.H.M. Weert, van
, A. Helman
, W. Einden, Van Den
, R.E. Algra
, M.A. Verheijen
, M.T. Borgström
, W.G.G. Immink
, J.J. Kelly
, L.P. Kouwenhoven
, E.P.A.M. Bakkers

Research output: Contribution to journal › Article › Academic › peer-review

45 Citations (Scopus)

Abstract

We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.

Original language	English
Pages (from-to)	4578-4579
Journal	Journal of the American Chemical Society
Volume	131
Issue number	13
DOIs	https://doi.org/10.1021/ja809871j
Publication status	Published - 2009

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10.1021/ja809871j

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abstract = "We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.",

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AU - Weert, van, M.H.M.

AU - Helman, A.

AU - Einden, Van Den, W.

AU - Algra, R.E.

AU - Verheijen, M.A.

AU - Borgström, M.T.

AU - Immink, W.G.G.

AU - Kelly, J.J.

AU - Kouwenhoven, L.P.

AU - Bakkers, E.P.A.M.

PY - 2009

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AB - We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.

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DO - 10.1021/ja809871j

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JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

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Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires

Abstract

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