Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

Ahid S. Hajo; Shihab Al-Daffaie; Oktay Yilmazoglu; Mohammad Tanvir Haidar; Franko Küppers

doi:10.1109/IRMMW-THz.2016.7758892

Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

Ahid S. Hajo
, Shihab Al-Daffaie
, Oktay Yilmazoglu
, Mohammad Tanvir Haidar
, Franko Küppers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off frequency as well as electric field enhancement at the Schottky contact for zero-bias operation. Furthermore, these metallic NWs can be integrated with semiconductor NWs for large scale, low cost THz detectors on any substrate, for example for security imaging application.

Original language	English
Title of host publication	2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-4673-8485-8
DOIs	https://doi.org/10.1109/IRMMW-THz.2016.7758892
Publication status	Published - 1 Dec 2016
Externally published	Yes
Event	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Danmarks Tekniske Højskole, Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016 Conference number: 41

Conference

Conference	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Abbreviated title	IRWWZ-THz 2016
Country/Territory	Denmark
City	Copenhagen
Period	25/09/16 → 30/09/16

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10.1109/IRMMW-THz.2016.7758892

Cite this

Hajo, A. S., Al-Daffaie, S., Yilmazoglu, O., Haidar, M. T., & Küppers, F. (2016). Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire. In 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) Article 7758892 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IRMMW-THz.2016.7758892

@inproceedings{21820375c5af4abb9f23e22cfc2937e4,

title = "Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire",

abstract = "We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off frequency as well as electric field enhancement at the Schottky contact for zero-bias operation. Furthermore, these metallic NWs can be integrated with semiconductor NWs for large scale, low cost THz detectors on any substrate, for example for security imaging application.",

author = "Hajo, \{Ahid S.\} and Shihab Al-Daffaie and Oktay Yilmazoglu and Haidar, \{Mohammad Tanvir\} and Franko K{\"u}ppers",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016, IRWWZ-THz 2016 ; Conference date: 25-09-2016 Through 30-09-2016",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/IRMMW-THz.2016.7758892",

language = "English",

booktitle = "2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)",

publisher = "Institute of Electrical and Electronics Engineers",

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Hajo, AS, Al-Daffaie, S, Yilmazoglu, O, Haidar, MT & Küppers, F 2016, Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire. in 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)., 7758892, Institute of Electrical and Electronics Engineers, 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016, Copenhagen, Denmark, 25/09/16. https://doi.org/10.1109/IRMMW-THz.2016.7758892

Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire. / Hajo, Ahid S.; Al-Daffaie, Shihab; Yilmazoglu, Oktay et al.
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). Institute of Electrical and Electronics Engineers, 2016. 7758892.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

AU - Hajo, Ahid S.

AU - Al-Daffaie, Shihab

AU - Yilmazoglu, Oktay

AU - Haidar, Mohammad Tanvir

AU - Küppers, Franko

N1 - Conference code: 41

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off frequency as well as electric field enhancement at the Schottky contact for zero-bias operation. Furthermore, these metallic NWs can be integrated with semiconductor NWs for large scale, low cost THz detectors on any substrate, for example for security imaging application.

AB - We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off frequency as well as electric field enhancement at the Schottky contact for zero-bias operation. Furthermore, these metallic NWs can be integrated with semiconductor NWs for large scale, low cost THz detectors on any substrate, for example for security imaging application.

UR - https://www.scopus.com/pages/publications/85006134959

U2 - 10.1109/IRMMW-THz.2016.7758892

DO - 10.1109/IRMMW-THz.2016.7758892

M3 - Conference contribution

AN - SCOPUS:85006134959

BT - 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)

PB - Institute of Electrical and Electronics Engineers

T2 - 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016

Y2 - 25 September 2016 through 30 September 2016

ER -

Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

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