XRD Investigation of the relaxation of InAsP layers grown by CBE on (100) InP

T.H. Marschner, M.R. Leijs, H. Vonk, J.H. Wolter

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5 Citations (Scopus)


We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentration increases drastically and stays constant if the relaxation degree is further increased. The increase in with beginning relaxation does not depend on the substrate off-orientation, although decreases with increasing off-orientation for pseudomorphic structures. XRD measurements on (partly) relaxed samples show different relaxation degrees in [0 1 1] and [0 1] directions. The dependence of the asymmetry of the relaxation in different directions on the substrate off-orientation and the layer thickness is discussed with respect to the influence of surface steps on the generation of misfit dislocations.
Original languageEnglish
Pages (from-to)873-877
Number of pages5
JournalPhysica E: Low-Dimensional Systems & Nanostructures
Issue number1-4
Publication statusPublished - 1998


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