X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots

A.A. Darhuber; E. Koppensteiner; G. Bauer; P.D. Wang; Y.P. Song; C.M. Sotomayor Torres; M.C. Holland

doi:10.1063/1.113606

X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots

A.A. Darhuber, E. Koppensteiner, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

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Abstract

Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.

Original language	English
Pages (from-to)	947-949
Number of pages	3
Journal	Applied Physics Letters
Volume	66
Issue number	8
DOIs	https://doi.org/10.1063/1.113606
Publication status	Published - 1995

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title = "X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots",

abstract = "Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.",

author = "A.A. Darhuber and E. Koppensteiner and G. Bauer and P.D. Wang and Y.P. Song and {Sotomayor Torres}, C.M. and M.C. Holland",

year = "1995",

doi = "10.1063/1.113606",

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volume = "66",

pages = "947--949",

journal = "Applied Physics Letters",

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T1 - X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots

AU - Darhuber, A.A.

AU - Koppensteiner, E.

AU - Bauer, G.

AU - Wang, P.D.

AU - Song, Y.P.

AU - Sotomayor Torres, C.M.

AU - Holland, M.C.

PY - 1995

Y1 - 1995

N2 - Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.

AB - Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.

U2 - 10.1063/1.113606

DO - 10.1063/1.113606

M3 - Article

SN - 0003-6951

VL - 66

SP - 947

EP - 949

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots

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