X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots

A.A. Darhuber, E. Koppensteiner, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)
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    Abstract

    Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.
    Original languageEnglish
    Pages (from-to)947-949
    Number of pages3
    JournalApplied Physics Letters
    Volume66
    Issue number8
    DOIs
    Publication statusPublished - 1995

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